1 T. Sameshima, "Status of Si thin film transis -tors" 2 : 1196-1201, May1998
2 J. Olivares,, "Solid -phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glass" 3 : 51-54, January1999
3 G. Fortunato, "Polycrystalline silicon thin-film transistors: A continuous evolving technology" 4 : 82-90, March1997
4 Noriyoshi Yamauchi, "Polycrystalline silicon thin films processed with silicon ion im -plantation and subsequent solid-phase crystalli -zation Journal of Applied Physics" 75 : 3235-3257,
5 T. Fujimura, "LCD R&D Center" Toshiba Corporation 175-178, 1999.
6 G. K .Giust, "High-performance laser-processed polysili con thin-film transistors" 20 (20): 77-79, 1999.02
7 Chun-Yen Chang, "Fabrication of thin film transistors by chemical mechanical polished polycrystalline sili -con films" 17 (17): 100-102, March1996
8 Byung-Hyuk Min, "Electrical characteristics of poly-Si TFT's with smooth surface roughness at oxide/poly-Si interface" 44 (44): 2036-2038, November1997
9 C. T. Angelis,, "Effect of excimer laser annealing on the structural and electrical properties of polycry -stalline silicon thin-film transistors" 86 (86): 4600-4606, October1999
10 G. Aichmayr,, "Dynamics of lateral grain growth during the laser interference crystalliza -tion of a-Si" 85 (85): 4010-4013, April1999
1 T. Sameshima, "Status of Si thin film transis -tors" 2 : 1196-1201, May1998
2 J. Olivares,, "Solid -phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glass" 3 : 51-54, January1999
3 G. Fortunato, "Polycrystalline silicon thin-film transistors: A continuous evolving technology" 4 : 82-90, March1997
4 Noriyoshi Yamauchi, "Polycrystalline silicon thin films processed with silicon ion im -plantation and subsequent solid-phase crystalli -zation Journal of Applied Physics" 75 : 3235-3257,
5 T. Fujimura, "LCD R&D Center" Toshiba Corporation 175-178, 1999.
6 G. K .Giust, "High-performance laser-processed polysili con thin-film transistors" 20 (20): 77-79, 1999.02
7 Chun-Yen Chang, "Fabrication of thin film transistors by chemical mechanical polished polycrystalline sili -con films" 17 (17): 100-102, March1996
8 Byung-Hyuk Min, "Electrical characteristics of poly-Si TFT's with smooth surface roughness at oxide/poly-Si interface" 44 (44): 2036-2038, November1997
9 C. T. Angelis,, "Effect of excimer laser annealing on the structural and electrical properties of polycry -stalline silicon thin-film transistors" 86 (86): 4600-4606, October1999
10 G. Aichmayr,, "Dynamics of lateral grain growth during the laser interference crystalliza -tion of a-Si" 85 (85): 4010-4013, April1999