Hot Wall Epitaxy(HWE)에 의한 CdGa₂Se₄/GaAs epilayer 성장과 광전기적 특성 = Growth and Characterization of CdGa₂Se₄/GaAs epilayer by Hot Wall Epitaxy

다국어 초록 (Multilingual Abstract)

The stochiometric mix of evaporating materials for the CdGa₂Se₄single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa₂Se₄mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630℃ and 420℃, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa₂Se₄single crystal thin films measured from Hall effect by van der Pauw method are 8.27×10^(17) ㎤, 345 ㎠/V ·s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe₂ single crystal thin film. We have found that the values of spin orbit splitting △So and the crystal field splitting △Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa₂Se₄single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exicition (D^(0) ,X) having very stron peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.