<P> Polymethylmethacrylate (PMMA)'s thermal and mechanical stability, high resistivity, and suitable dielectric constant make it an ideal candidate for the polymer thin film for the dielectric layer. PMMA thin films were fabricated on a glass su...
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https://www.riss.kr/link?id=A107752401
2009
-
SCOPUS,SCIE
학술저널
223-231(9쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P> Polymethylmethacrylate (PMMA)'s thermal and mechanical stability, high resistivity, and suitable dielectric constant make it an ideal candidate for the polymer thin film for the dielectric layer. PMMA thin films were fabricated on a glass su...
<P> Polymethylmethacrylate (PMMA)'s thermal and mechanical stability, high resistivity, and suitable dielectric constant make it an ideal candidate for the polymer thin film for the dielectric layer. PMMA thin films were fabricated on a glass substrate, using the spin coating process, at room temperature. The thermal-degradation temperature of PMMA was about 280°C, and the glass transition temperature (Tg) was about 110°C. To determine the effect of annealing, the coating films were annealed at 70-200°C for 60 m under argon atmosphere. The surfaces of the coating films were compact and uniform at all the annealing temperatures. The surface energies of the coating films were obtained by measuring the contact angles with deionized water and di-iodomethane. The coating films were found to have low surface energies. Up to below Tg, the dielectric constants of the coating films slightly increased owing to an increase of the total polarization arising from dipoles and trapped charge carriers. Above Tg, the coating films began to degrade; as such, their dielectric constants decreased. To ensure the reliability of the thermal endurance of the dielectric properties of the coating films, annealing was repeated three times, at 100°C. The coating films then showed no degraded dielectric properties.</P>
New Crystallization Method of Amorphous Silicon by Selective Area Heating for Stamp Process