We discuss and develop a compact MOSFET modeling scheme in order to obtain accurate descriptions of the drain current and its derivatives up to the 5th order. We have analyzed the physical effects which govern the behaviour of the 3rd<br/> deriv...

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https://www.riss.kr/link?id=A75956248
B. Iniguez ; R. Picos ; I. Kwon ; M. S. Shur ; T. A. Fjeldly ; K. Lee
2004
Korean
SCIE,SCOPUS,KCI등재
학술저널
141-148(8쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
We discuss and develop a compact MOSFET modeling scheme in order to obtain accurate descriptions of the drain current and its derivatives up to the 5th order. We have analyzed the physical effects which govern the behaviour of the 3rd<br/> deriv...
We discuss and develop a compact MOSFET modeling scheme in order to obtain accurate descriptions of the drain current and its derivatives up to the 5th order. We have analyzed the physical effects which govern the behaviour of the 3rd<br/>
derivative in long and deep-submicron channel MOSFETs. Our modeling agrees well with experimental data and describes continuous transitions between operating regimes, thanks to the use of continuous functions, which do not introduce any artificial peaks.<br/>
목차 (Table of Contents)
MOSFET Model HiSIM Based on Surface-Potential Description for Enabling Accurate RF-CMOS Design
On-Chip Spiral Inductors for RF Applications: An Overview
Optimization of Low Power CMOS Baseband Analog Filter-Amplifier Chain for Direct Conversion Receiver
System Level Design of Multi-standard Receiver Using Reconfigurable RF Block