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SHALLOW IMPLANTED LAYERS IN ADVANCED SILICON DEVICES.
Shannon, J.M. North Holland Pub. Co 1981 p.545-555
ELECTRICAL CHARACTERISTICS OF ION IMPLANTED COMPOUND SEMICONDUCTORS.
Donnelly, J.P. North Holland Pub. Co 1981 p.553-557
POST-IMPLANTATION PROCESSES IN SEMICONDUCTORS.
Foti, G. North Holland Pub. Co 1981 p.573-557
ELECTRICAL AND PHYSICAL ANALYSIS OF INDIUM IMPLANTED (111) SILICON.
Elliman, R.G.; Harrison, H.B.; Beanland, D.G. North Holland Pub. Co 1981 p.581-558
ELLIPSOMETRIC AND CHANNELING STUDIES ON ION-IMPLANTED SILICON.
Lohner, T.; Mezey, G.; Kotai, E.; Paszti, F.; Kiralyhidi, L.; Valyi, G.; Gyulai, J. North Holland Pub. Co 1981 p.591-559
REFLECTANCE OF SILICON SURFACES AFTER HIGH DOSE RATE MOLECULAR ION IMPLANTATION.
Lampert, M.O.; Hage-Ali, M.; Muller, J.C.; Toulemonde, M.; Siffert, P. North Holland Pub. Co 1981 p.595-560
Raicu, B. North Holland Pub. Co 1981 p.601-660
ELECTRONIC TRANSPORT IN ION-BOMBARDED AMORPHOUS SILICON.
Pfeilsticker, R.; Kalbitzer, S.; Mueller, G. North Holland Pub. Co 1981 p.603-660
COMPARATIVE STUDIES OF Mg IMPLANTS IN GaAs IN DIFFERENT ANNEALING ENVIRONMENTS.
Yeo, Y.K.; Park, Y.S.; Byung Doo Choe North Holland Pub. Co 1981 p.609-661
DUAL IMPLANTATION AND AMPHOTERIC BEHAVIOR OF Ge IMPLANTS IN GaAs.
Park, Y.S.; Yeo, Y.K.; Pedrotti, F.L. North Holland Pub. Co 1981 p.617-662