<P><B>Abstract</B></P><P>Unintentionally formed nanocrystalline graphene (nc‐G) can act as a useful seed for the large‐area synthesis of a hexagonal boron nitride (h‐BN) thin film with an atomically flat...
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https://www.riss.kr/link?id=A107539299
Lee, Kang Hyuck ; Shin, Hyeon‐ ; Jin ; Kumar, Brijesh ; Kim, Han Sol ; Lee, Jinyeong ; Bhatia, Ravi ; Kim, Sang‐ ; Hyeob ; Lee, In‐ ; Yeal ; Lee, Hyo Sug ; Kim, Gil‐ ; Ho ; Yoo, Ji‐ ; Beom ; Choi, Jae‐ ; Young ; Kim, Sang‐ ; Woo
2014
-
학술저널
11677-11681(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P><B>Abstract</B></P><P>Unintentionally formed nanocrystalline graphene (nc‐G) can act as a useful seed for the large‐area synthesis of a hexagonal boron nitride (h‐BN) thin film with an atomically flat...
<P><B>Abstract</B></P><P>Unintentionally formed nanocrystalline graphene (nc‐G) can act as a useful seed for the large‐area synthesis of a hexagonal boron nitride (h‐BN) thin film with an atomically flat surface that is comparable to that of exfoliated single‐crystal h‐BN. A wafer‐scale dielectric h‐BN thin film was successfully synthesized on a bare sapphire substrate by assistance of nc‐G, which prevented structural deformations in a chemical vapor deposition process. The growth mechanism of this nc‐G‐tailored h‐BN thin film was systematically analyzed. This approach provides a novel method for preparing high‐quality two‐dimensional materials on a large surface.</P>