16MDRAM급 NMOS 트랜지스터의 전원전압, 채널길이와 기판농도 = Power Supply Voltage, Channel Length and Subtrate Doping Concentration of NMOS Transistor Used for 16MDRAM

다국어 초록 (Multilingual Abstract)

The power supply voltage and the channel length of an NMOS transistor used for 16MDRAM have been investigated. The maximum effective channel length which does not degrade operating speed of an inverter greatly, is calculated for power supply voltages and the life time of the NMOS transistor also estimated in terms of power supply voltages and channel lengths. As results, short channel length and low power supply voltage are effective in the operating speed and the life time. Short channel effects are optimized experimentally by varying substrate doping concentrations. Minimum channel length of the transistor is achieved to be 0.8㎛ from the results of punchthrough voltages and the optimum p-well does to be 4.5E12cm² from the results of DIBL and snap-back voltages.