고압 수증기 내에서 산화막 형성에 관한 연구 = Oxide Layer Growth in High-Pressure Steam Oxidation

다국어 초록 (Multilingual Abstract)

This paper shows experimentally that oxide layer on the p-type Si-substrate can grow at low temperature(500℃∼600℃) using high pressure water vapor system. As the result of experiment, oxide layer growth rate is about 0.19Å/min at 500℃, 0.43Å/min at 550℃, 1.2Å/min at 600℃ respectively. So, we know oxide layer growth follows reaction-controlled mechanism in given temperature range. Consequently, granting that oxide layer growth rate increases linearly to temperature over 600℃, we can expect oxide growth rate is 5.2Å/min at 1000℃. High pressure oxidation of silicon is particularly attractive for the thick oxidation of power MOSFET, because thermal oxide layers can grow at relatively low temperature in run times comparable to typical high-temperature. 1 atm conditions. In the condition of higher-temperature and high-pressure steam oxidation. the oxidation time is reduced significantly.

목차 (Table of Contents)

• 1.서론
• 2.고압 수증기 산화 장비의 제작 및 실험
• 2.1 장비의 제작
• 2.2 산화막의 형성
• 3.산화막의 두께 측정 및 분석
• 4.결론