Monte Carlo 방법을 이용한 반도체 소자의 잡음특성 분석 = Noise Characteristic Analysis of A Semiconductor Device Using Monte Carlo Method

다국어 초록 (Multilingual Abstract)

In this research, we performed the MC simulation describing the particle motion more closely to the real world throughout the free flight time.
The electric field in simulation is no more continuous, but it is the from of piecewise constant.
Therefore electrons move with uniform field calculated at every field adjusting time step within each cell, but in case which the electric field is very high in particular cell, or the initial velocity of an electron is so high, there exists the possibility of going across the boundary.
The convensional version of simulation mitigates its possibility somehow reducing the field adjusting time step.
This method, however, can affect the computer execution time critically. Hence we proposed the boundary arriving time so that we can obtain more exact result without reducing the field adjusting time step.
To prove the reliability of the proposed MC method, we simulate and compared with each method.
Finally, we guaranteed the validity of the new method.
With this method, we also calculated the noise characteristics. of the
semiconductor sample.

목차 (Table of Contents)

• Ⅰ. 서 론
• Ⅱ. Self-Consistent 앙상블 Monte Carlo 방법
• Ⅲ. 전자궤적에 대한 고찰
• Ⅳ. 반도체 소자의 잡음특성 분석
• Ⅴ. 모의실험 결과 및 검토
• Ⅵ. 결 론
• 참고문헌