半導體 PbS 薄膜의 活性化硏究 = Studies on Activation of Semiconductive PbS Films

다국어 초록 (Multilingual Abstract)

Auger electron spectroscopy has been used in conjunction with argon ion sputtering in a study of the chemical structure of the surface, bulk and interface region between chemical deposited PbS and the glass substrate, thermally oxidated PbS and the glass substrate and thermally oxidated PbS and the SiO_2. All these PbS films were activated by means of oxidation in various conditions. In the result of the present study, we showed that our experiments are coincidence with theroretical mechanism "minority-carrier model" of photoconductivity of PbS film. The principal features in the Auger electron of a complex spectra from a SiO_2, carbide and graphite surface are presented. They occurred when some of the electrons involved in this Auger process are valence electrons. It was found that these complex spectra serve as a fingerprint for the identification of the form of the carbon, oxygen at surface. We found the chemical structure of the surface, bulk and interface of a 1-2μ PbS chemical deposited on SiO_2 and simultaneous activation effect of SiO_2-PbS interface.