Chemistry and defects in semiconductor heterostructures : symposium held April 24-27, 1989, San Diego, California, U.S.A.

목차 (Table of Contents)

• CONTENTS
• Preface = xi
• Materials Research Society Symposium Proceedings = xii
• PART I: METAL／SEMICONDUCTOR HETEROSTRUCTURES I
• THERMODYNAMICS, KINETICS AND INTERFACE MORPHOLOGY OF REACTIONS BETWEEN METALS AND GaAs / Jen-Chwen Lin ; Y. Austin Chang = 3
• A STUDY OF THERMODYNAMIC PHASE STABILITY OF INTERMETALLIC THIN FILMS OF $$Pt_2$$Ga, PtGa, AND $$PtGa_2$$ ON GALLIUM ARSENIDE / Young K. Kim ; David K. Shuh ; R. Stanley Williams ; Larry P. Sadwick ; Kang L. Wang = 15
• IN-SITU ANNEALING TRANSMISSION ELECTRON MICROSCOPY (TEM) STUDY OF THE Ti／GaAs INTERFACIAL REACTIONS / Ki-Bum Kim ; Robert Sinclair = 21
• CORRELATIONS BETWEEN ELECTRICAL PROPERTIES AND SOLID STATE REACTIONS IN Co／n-GaAs CONTACTS: A BULK AND THIN-FILM STUDY / F.-Y. Shiau ; Y. Austin Chang = 29
• THE GROWTH RATES OF INTERMEDIATE PHASES IN Co／Si DIFFUSION COUPLES: BULK VERSUS THIN-FILM STUDIES / C. H. Jan ; Jen-Chwen Lin ; Y. Austin Chang = 35
• INVESTIGATION OF THE INTERFACE INTEGRITY OF THE THERMALLY STABLE WN／GaAs SCHOTTKY CONTACTS / J. Ding ; B. Lee ; K. M. Yu ; R. Gronsky ; J. Washburn = 41
• PHASE FORMATION IN THE Pt／InP THIN FILM SYSTEM / D. A. Olson ; K. M. Yu ; J. Washburn ; Timothy Sands = 47
• COMPARISON OF Pd／InP AND Pd／GaAs THIN-FILM SYSTEMS FOR DEVICE METALLIZATION / R. Caron-Popowich ; J. Washburn ; Timothy Sands ; E.D. Marshall = 53
• PART II: METAL／SEMICONDUCTOR HETEROSTRUCTURES II
• A KINETIC PHASE DIAGRAM FOR ULTRATHIN FILM Ni／Si(111): AUGER L1NESHAPE RESULTS / P. A. Bennett ; J. R. Butler ; X. Tong = 61
• QUATERNARY PHASE EQUILIBRIA IN THE Ti-Si-N-O SYSTEM: STABILITY OF METALLIZATION LAYERS AND PREDICTION OF THIN FILM REACTIONS / Ameet S. Bhansali ; Robert Sinclair = 71
• KINETICS AND THERMODYNAMICS OF AMORPHOUS SILICIDE FORMATION IN NICKEL／AMORPHOUS-SILICON MULTILAYER THIN FILMS / L. A. Clevenger ; C. V. Thompson ; R. R. de Avillez ; K. N. Tu = 77
• A MODEL FOR INTERDIFFUSION AT METAL／SEMICONDUCTOR INTERFACES: CONDITIONS FOR SPIKING / Olof C. Hellman ; Nicole Herbots ; David C. Eng = 83
• ELECTRON-RADIATION-INDUCED EPITAXIAL GROWTH OF CoS$$i_2$$ ON Si(111) / C. W. Nieh ; T. L. Lin ; R. W. Fathauer = 89
• MOIR$$\acute E$$ PATTERN STUDIES OF THIN LAYERS DEPOSITED ON (001l)Si SUBSTRATES: CASES OF TiS$$i_2$$ AND GaAs / Andr$$\acute e$$ Rocher ; X. Wallart ; M. N. Charasse = 95
• PART III: THE MECHANISM OF SCHOTTKY BARRIER FORMATION
• NEW ELECTRONIC PROPERTIES OF METAL／III-V COMPOUND SEMICONDUCTOR INTERFACES / Leonard J. Brillson ; R. E. Viturro ; S. Chang ; J. L. Shaw ; C. Mailhiot ; R. Zanoni ; Y. Hwu, G. Margaritondo ; P. Kirchner ; J. M. Woodall = 103
• ELECTRICAL STUDY OF METAL／GaAs INTERFACES / N. Newman ; W. E. Spice ; E. R. Weber ; Z. Liliental-Weber = 117
• METAL／SEMICONDUCTOR INTERFACES WITH NOVEL STRUCTURAL AND ELECTRICAL PROPERTIES: METAL CLUSTER DEPOSITION / G. D. Waddill ; I. M. Vitomirov ; C. M. Aldao ; Steven G. Anderson ; C. Capasso ; J. H. Weaver = 121
• EFFECT OF Si AND Ge INTERFACE LAYERS ON THE SCHOTTKY BARRIER HEIGHT OF METAL CONTACTS TO GaAs / J. R. Waldrop ; R. W. Grant = 125
• DEFECT REACTIONS AT METAL／SEMICONDUCTOR AND SEMICONDUCTOR／SEMICONDUCTOR INTERFACES / W. Walukiewicz = 137
• PART IV: OHMIC CONTACTS／INSULATOR-SEMICONDUCTOR HETEROSTRUCTURES
• DEVELOPMENT OF THERMALLY STABLE INDIUM-BASED OHMIC CONTACTS TO n-TYPE GaAs / Masanori Murakami ; H. J. Kim ; W. H. Price ; M. Norcott ; Yih-Cheng Shih = 151
• OHMIC CONTACT FORMATION MECHANISM IN THE Ge／Pd／n-GaAs SYSTEM / E. D. Marshall ; S. S. Lau ; C. J. Palmstr$$\emptyset$$m ; Timothy Sands ; C. L. Schwartz ; S. A. Schwarz ; J. P. Harbison ; L. T. Florez = 163
• THE AuZn／GaAs HETEROJUNCTION: EVIDENCE OF VARYING SOLID STATE REACTIONS / George J. Vendura, Jr. ; Russell Messier ; Karl Spear ; Carlo Pantano ; William Drawl = 169
• EQUILIBRIUM PHASE DIAGRAMS FOR ANALYSIS OF THE OXIDATION OF III-V COMPOUND SEMICONDUCTORS / Gary P. Schwartz = 177
• MBE GROWTH OF $$Ca_5$$$$Sr_5$$$$F_2$$ ON (100), (111), (511) AND (711) GaAs SURFACES / K. Young ; S. Horng ; A. Kahn ; Julia M. Phillips = 185
• THE EFFECT OF ANNEALING ON THE STRUCTURE OF EPITAXIAL Ca$$F_2$$ FILMS ON Si(100) / Julia M. Phillips ; J. E. Palmer ; N. E. Hecker ; C. V. Thompson = 191
• THE ADSORPTION OF GALLIUM ON THE CLEAVED SURFACE OF InP, InAs AND InSb / W. N. Rodrigues ; W. M$$\ddot o$$nch = 197
• PART V: HETEROEPITAXY ON SILICON I
• METHODS TO DECREASE DEFECT DENSITY IN GaAs／Si HETEROEPITAXY / Zuzanna Liliental-Weber = 205
• THE USE OF SUPERLATTICES TO BLOCK THE PROPAGATION OF DISLOCATIONS IN SEMICONDUCTORS / A. E. Blakeslee = 217
• THE "BUFFER" LAYER IN THE CVD GROWTH OF $$\beta$$-SiC ON (001) SILICON / T. T. Cheng ; P. Pirouz ; J. A. Powell = 229
• EFFECTS OF GROWTH TEMPERATURE ON MOCVD-GROWN GaAs-ON-Si / S. Nozaki ; N. Noto ; M. Okada ; T. Egawa ; T. Soga ; T. Jimbo ; M. Umeno = 235
• CHARACTERIZATION OF GaAs／Si／GaAs HETEROINTERFACES / Zuzanna Liliental-Weber ; Raymond P. Mariella, Jr. = 241
• GROWTH OF GaAs ON Si USING AlGaP INTERMEDIATE LAYER / N. Noto ; S. Nozaki ; T. Egawa ; T. Soga ; T. Jimbo ; M. Umeno = 247
• NUCLEATION STUDIF OF LATTICE MATCHED AND MIS-MATCHED HETEI EPITAXIAL LAYERS USING THE GaAs／$$Al_xGa_{1-x}$$P／Si SYSTEM / Thomas George ; Eicke R. Weber ; A. T. Wu ; S. Nozaki ; N. Noto ; M. Umeno = 253
• PART VI: HETEROEPITAXY ON SILICON II
• ANTIPHASE DEFECT REDUCTION MECHANISM IN MBE-GROWN GaAs ON Si / Takashi Shiraishi ; Haruhiko Ajisawa ; Shin Yokoyama ; Mitsuo Kawabe = 261
• EVALUATION OF ANTI-PHASE BOUNDARIES IN GaAS／Si HETEROSTRUCTURES BY TRANSMISSION ELECTRON MICROSCOPY / O. Ueda ; T. Soga ; T. Jimbo ; M. Umeno = 267
• CORRELATION BETWEEN CRYSTALLIN1TY AND SCHOTTKY DIODE CHARACTERISTICS OF GaAs GROWN ON Si BY MOCVD / T. Egawa ; S. Nozaki ; N. Noto ; T. Soga ; T. Jimbo ; M. Umeno = 273
• SILICON SURFACE PASSIVATION FOR HETEROEPITAXY BY HYDROGEN TERMINATION / D. B. Fenner ; D. K. Biegelsen ; R. D. Bringans ; B. S. Krusor = 279
• HOTOEMISSION STUDY OF Si(001) SURFACES EXPOSED TO AS FLUX / H. Okumura ; K. Miki ; K. Sakamoto ; T. Sakamoto ; S. Misawa ; K. Endo ; S. Yoshida = 285
• ELECTRICAL PROPERTIES OF THIN INTERMETALLIC PLATINUM-GALLIUM FILMS GROWN BY MBE ON GALLIUM ARSENIDE AND SILICON / L. P. Sadwick ; R. M. Ostrom ; B. J. Wu ; K. L. Wang ; R. S. Williams = 291
• GROWTH AND CHARACTERIZATIONS OF GaAs ON InP WITH DIFFERENT BUFFER STRUCTURES BY MOLECULAR BEAM EPITAXY / Xiaoming Liu ; Henry P. Lee ; Shyh Wang ; Thomas George ; Eicke R. Weber ; Zuzanna Liliental-Weber = 297
• INTERFACIAL MICROSTRUCTURES IN $$In_x$$$$Ga_{1-x}$$As／GaAs STRAINED-LAYER STRUCTURES / J. Y. Yao ; T. G. Andersson ; G. L. Dunlop = 303
• EXPERIMENTAL AND THEORETICAL ANALYSIS OF STRAIN RELAXATION IN $$Ge_x$$$$Si_{1-x}$$／Si(100) HETEROEPITAXY / R. Hull ; J. C. Bean = 309
• COHERENCY STRAIN OF AN OVERGROWN ISLAND / J. K. Lee ; S. A. Hackney = 317
• RHEED OBSERVATION OF LATTICE RELAXATION DURING Ge／Si(001) HETEROEPITAXY / Kazushi Miki ; Kunihiro Sakamoto ; Tsunenori Sakamoto = 323
• EFFECT OF STRAIN AND INTERFACE INTERDIFFUSION ON THE VALENCE BAND OFFSET AT Si／Ge INTERFACES / Mark S. Hybertsen = 329
• DEFECTS AND STRAIN IN $$Ge_x$$$$Si_{1-x}$$／Si LAYERS GROWN BY RAPID THERMAL PROCESSING CHEMICAL VAPOR DEPOSITION / K. H. Jung ; Y. M. Kim ; H. G. Chun ; D. L. Kwong ; L. Rabenberg = 335
• ELECTRON-BEAM-INDUCED-CURRENT (EBIC) IMAGING OF DEFECTS IN $$Si_{1-x}Ge_x$$ MULTILAYER STRUCTURES / J. C. Sturm ; X. Xiao ; P. M. Garone ; P. V. Schwartz = 341
• STUDIES OF INTERFACE MIXING IN A SYMMETRICALLY STRAINED Ge／Si SUPERLATTICE / R. C. Bowman, Jr. ; P. M. Adams ; S. J. Chang ; V. Arbet ; K. L. Wang = 347
• PART VII: CHARACTERIZATION OF DEFECTS IN HETEROSTRUCTURES I
• A NOVEL METHOD FOR STUDY OF ROUGHNESS AT BURIED INTERFACES BY PLAN VIEW TEM: Si／Si$$O_2$$ / J. M. Gibson ; M. Y. Lanzerotti = 355
• INTERFACE ROUGHNESS OF QUANTUM WELLS STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE / H. X. Jiang ; P. Zhou ; S. A. Solm ; G. Bai = 361
• DEFECTS AT THE INTERFACE OF$$GaAs_xP_{1-x}$$／GaP GROWN BY VAPOR PHASE EPITAXY / Seiji Takeda ; Mitsuji Hirata ; Hisanori Fujita ; Tadashige Sato ; Katsushi Fujii = 367
• EFFECTS OF CHARGE TRANSFER ON THE MICROSCOPIC THEORY OF STRAIN-LAYER EPITAXY / Raphael Tsu ; Fredy Zypman ; Richard F. Greene = 373
• POSITION-SENSITIVE ATOM PROBE AND STEM ANALYSIS OF THE MICROCHEMISTRY OF GaInAs／InP QUANTUM WELLS / J. Alex Liddle ; Neil J. Long ; A. G. Norman ; Alfred Cerezo ; Chris R. M. Grovenor = 377
• A CORRELATION BETWEEN DEFECT PRODUCTION AND EXCITONIC EMISSION IN THE IRRADIATED ZnSe-ZnS STRAINED-LAYER SUPERLATTICES / Maki Sekoguchi ; Tsunemasa Taguchi = 383
• EPITAXIAL GROWTH OF II-VI SEMICONDUCTORS ON VICINAL GaAs SURFACES / G. Feuillet ; J. Cibert ; E. Ligeon ; Y. Gobil ; K. Saminadayar ; S. Tatarenko = 389
• PART VIII: CHARACTERIZATION OF DEFECTS IN HETEROSTRUCTURES II
• FORMATION OF INSULATING LAYERS IN GaAs-AlGaAs HETEROSTRUCTURES / W. S. Hobson ; S. J. Pearton ; C. R. Abemathy ; A. E. von Neida = 397
• DEFECT HETEROJUNCTION MODEL FOR ANOMALOUS PHOTO-RESPONSE OF p／n GaAs GROWN ON n-Ge SUBSTRATES / Larry D. Partain ; Marc Grounner = 403
• CRYSTALLINITY OF ISOLATED SILICON EPITAXY (ISE) SILICON-ON-INSULATOR LAYERS / L. T. P. Alien ; P. M. Zavracky ; D. P. Vu ; M. W. Batty ; W. R. Henderson ; T. J. Boden ; D. K. Bowen ; D. Gorden-Smith ; C. R. Thomas ; T. Tjahjadi = 409
• CREATION OF INTERFACE STATES AT THE SILICON／SILICON DIOXIDE INTERFACE BY UV LIGHT WITHOUT HOLE TRAPPING / W. K. Schubert ; C. H. Seager ; K. L. Brower = 415
• DEEP LEVEL TRANSIENT SPECTROSCOPY OF DEFECTS INDUCED BY THE COMBINATION OF $$CF_4$$ REACTIVE ION ETCHING AND OXIDATION IN METAL-OXIDE-SILICON CAPACITORS / Dominique Vuillaume ; Jeff P. Gambino = 421
• MOLECULAR BEAM EPITAXY ON THE $$(NH_4)_2$$$$(S)_x$$-TREATED SURFACE OF GaAs / H. Oigawa ; M. Kawabe ; J. -F. Fan ; Y. Nannichi = 427
• DX CENTER IN GaAs-GaAlAs SUPERLATTICES SUPPRESSION AND IDENTIFICATION / S. L. Feng ; J. C. Bourgoin ; H.J. von Bardeleben ; E. Barbier ; J. P. Hirtz ; F. Mollot = 433
• EPR STUDIES OF DX CENTER RELATED PARAMAGNETIC STATES IN $$Ga_{0.69}Al_{0.31}$$As : Sn / H. J. von Bardeleben ; J. C. Bourgoin ; P. Basmaji ; P. Gibart = 439
• EXPERIMENTAL CONFIRMATION OF THE DONOR-LIKE NATURE OF DX IN AlGaAs / T. W. Dobson ; J. F. Wager = 445
• INTERACTION OF OXYGEN WITH NATIVE CHEMICAL DEFECTS IN CuIn$$Se_2$$ THIN FILMS / Rommel Noufi ; David Cahen = 451
• Author Index = 457
• Subject Index = 461