측정주파수에 대한 MOS CAPACITOR의 특성분석 = A Study on the Characteristic Analysis of Mos Capacitor to Measuring Frequency

다국어 초록 (Multilingual Abstract)

In this paper, the capacitance meter measured the capacitance value of a Mos capacitor in contrast to measuring frequency while allowing the application of D.C bias from -1 to +4V at intervals of 0.05V at room temperature.
Also, C-V plot was made by the measured data and the characteristic of C-V plot was analysed.
As a result, it was shown generally that the higher a test frequency was, the smaller the capacitance value was, though the variational process of C-V plot was a little different from an ideal C-V plot and separative elements effected the ideal C-V plot.

목차 (Table of Contents)

• 목차
• Abstract = 97
• Ⅰ. 서론 = 97
• Ⅱ. MOS DIDE의 개요 = 98
• 1. 이상적인 MOS 다이오드 = 98
• 2. 이상적인 MOS 다이오드의 반도체 표면 = 98
• Ⅲ. MOS 소자의 C-V 특성 = 100
• 1. 고주파 C-V 곡선 = 100
• 2. C-V곡선의 여러 가지 영역에서의 전압과 Capacitance의 관계 = 101
• 3. 저주파 C-V 곡선 = 102
• 4. 이상적인 C-V 곡선으로 부터의 이탈 요소 = 102
• 5. OXIDE 내에서의 전하분포 = 103
• Ⅳ. 실험 및 결과 = 104
• 1. Frequency = 1[KHz}에서의 C-V분석 = 104
• 2. Frequency = 10[KHz}에서의 C-V분석 = 105
• 3. Frequency = 100[KHz}에서의 C-V분석 = 105
• Ⅴ. 결론 = 105
• 참고문헌 = 105