As 이온 주입된 비정질 탄소 박막의 마이크로플라즈마 화학기상증착법에 의한 자동 어닐링 효과에 관한 연구 = Self Annealing Effects of Arsenic Ion Implanted Amorphous Carbon Films during Microwave Plasma Chemical Vapor Deposition

다국어 초록 (Multilingual Abstract)

For the simplification of doping process in amorphous carbon film, arsenic (As) ions were implanted on the nucleated silicon wafer before the growth process. Then amorphous carbon films were grown at the condition of $CH_4/H_2=5%$ by microwave plasma chemical vapour deposition. Because the implanted seeds were grown at the high temperature and the implanted ions were spread, it was possible to reduce the process steps by leaving out the annealing process. When the implanted amorphous carbon films were electrically characterized in diode configuration, field emission current of $0.1mA/cm^2$ was obtained at the applied electric field of about $2.5V/{\mu}m$. The results show that the implanted As ions were sufficiently doped by the self-annealing process by using the growth after implantation.

참고문헌 (Reference)

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