HVPE 법을 활용한 GaN 성장 시 질화처리에 관한 연구 = A study on the nitridation of GaN crystal growth by HVPE method

다국어 초록 (Multilingual Abstract)

HVPE is one of the GaN single crystal manufacturing methods which has been commercially widely used due to its high growth rate. HVPE method consists of a number of processes, in particular the nitridation of the substrate prior to GaN growth has a significant effect on the crystalline quality of the manufactured GaN single crystal. In this study, we investigated the effect of nitridation for crystalline quality of GaN when it was grown on the sapphire substrate. The whole growth conditions except for the nitridation process were the same, and the gas flow rate supplied to the sapphire substrate was variously changed during the nitridation. Here, we examined the effect of nitridation via the surface characterization of GaN single crystal grown by HVPE.

참고문헌 (Reference)

1 이희애, "전력반도체용 GaN 기판 산업동향" 한국결정성장학회 28 (28): 159-165, 2018

2 M. S. Lee, "Thick GaN growth via GaN nanodot formation by HVPE" 19 : 930-, 2017

3 X. Liu, "Stress-induced in situ epitaxial lateral overgrowth of high-quality GaN" 16 : 8058-, 2014

4 G. Namkoong, "Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics" 91 : 2499-, 2002

5 E. Richter, "Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE" 277 : 6-, 2005

6 K. Uchida, "Nitridation process of sapphire substrate surface and its effect on the growth of GaN" 79 : 3487-, 1996

7 박재화, "HVPE 법에서의 공정변수 조절에 의한 bulk GaN 단결정의 두께 최적화" 한국결정성장학회 27 (27): 89-93, 2017

8 K. Hiramatsu, "Growth mechanism of GaN grown on sapphire with AlN buffer layer by MOVPE" 115 : 628-, 1991

9 H.M. Foronda, "Curvature and bow of bulk GaN substrates" 120 : 035104-, 2016

10 K. Fujito, "Bulk GaN crystals grown by HVPE" 311 : 3011-, 2009

11 D. Ehrentraut, "Advances in bulk crystal growth of AIN and GaN" 34 : 259-, 2009