급속열처리시 Ta-silicide박막 형성에 미치는 불순물 인의 영향 = The effect of Phosphorus on the Formaion of Ta-silicide film by RTA)

다국어 초록 (Multilingual Abstract)

Ta-silicide films in polycide structure were prepared by rapid thermal annealing of sputtered Ta film on poly-Si and doped poly-Si. Effects of phosphorus on Ta-silicide formation were investigated. Independent of the ion dose($1 \times 10^{13}\to 5 \times 10^{15}$/ions/$\textrm{cm}^2$), Ta-silicide phases were formed at $800^{\circ}C$ and stabilized above $1000^{\circ}C$. From the result of XRD at $800^{\circ}C$ and $900^{\circ}C$, however, it was indicated that the more the doping concentration the weaker the intensity of Ta-silicide phases. Furthermore, the observation of SEM revealed that the increase of the doping concentration retarded silicidation. As the temperature increased, the dopant effect was weakened gradually and almost disappeared at $1000^{\circ}C$. Therefore the variation of the ion dose from ($1 \times 10^{13}\to 5 \times 10^{15}$/ions/$\textrm{cm}^2$) did not greatly affect the formation of Ta-silicide at high temperatures but retarded slightly the silicidation at low temperatures.