<P>A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel poten...
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https://www.riss.kr/link?id=A107574884
2010
-
SCI,SCIE,SCOPUS
학술저널
2934-2938(5쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel poten...
<P>A silicon nanowire field effect transistor (FET) straddled by the double-gate was demonstrated for biosensor application. The separated double-gates, G1 (primary) and G2 (secondary), allow independent voltage control to modulate channel potential. Therefore, the detection sensitivity was enhanced by the use of G2. By applying weakly positive bias to G2, the sensing window was significantly broadened compared to the case of employing G1 only, which is nominally used in conventional nanowire FET-based biosensors. The charge effect arising from biomolecules was also analyzed. Double-gate nanowire FET can pave the way for an electrically working biosensor without a labeling process.</P><P><B>Graphic Abstract</B>
<IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-8/nl1010965/production/images/medium/nl-2010-010965_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl1010965'>ACS Electronic Supporting Info</A></P>
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