Optimization of Alcohol Compound-Based Etchant for Highly Selectivity-Etching Nano-Scale Thick Si/Si1-xGex Multi-Layers in Lateral-Gate-All-Around Field-Effect Transistor Beyond 3-nm Design Rule = 3나노 이하 미세공정 향 고선택비 식각이 가능한 알코올 첨가제 기반 습식 식각액 개발

목차 (Table of Contents)

• Contents
• ABSTRACT
• Chapter1. Introduction
• 1.1 The necessity for selective etching of Si / SiGe for GAA structure.
• Chapter2. Experiments
• 2.1 Experimental process for Si- and Si0.7Ge0.3-blanket film and multi-layer stacked film.
• 2.2 Etching condition of Si- and SiGe -blanket film and multi-layer stacked film.
• Chapter3. Results and Discussion
• 3.1 Dependencies of additive type on etch rate and selectivity
• 3.2 Adsorption degree and contact angle depending on the type of alcoholic additive
• 3.3 Surface analysis for confirming adsorption onto Si-film surface
• 3.4 Lateral Si0.7Ge0.3 etch rate and profile depending on additive type
• Chapter4. Conclusions & Future work
• Reference
• 국문요지