1 W. Welnic, "Unraveling the Interplay of Local Structure and Physical Properties in Phase-change Materials" 5 : 56-62, 2006
2 한승민, "Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory" ELSEVIER SCIENCE SA 517 (517): 848-852, 200811
3 T. H. Jeong, "Study of Oxygen-doped GeSbTe Film and its Effect as an Interface Layer on the Recording Properties in the Blue Wavelength" 40 : 1609-1612, 2001
4 N. Yamada, "Structure of Laser-crystallized Ge2Sb2+xTe5 Sputtered Thin Films for Use in Optical Memory" 88 : 7020-7028, 2000
5 I. Friedrich, "Structural Transformations of Ge2Sb2Te5 Films Studied by Electrical Resistance Measurements" 87 : 4130-4134, 2000
6 K. Shportko, "Resonant Bonding in Crystalline Phase-change Materials" 7 : 653-658, 2008
7 K. Kim, "Reliability Investigations for Manufacturable High Density PRAM" 157-162, 2005
8 R. Kojima, "Nitrogen Doping Effect on Phase Change Optical Disks" 37 : 2098-2103, 1998
9 I.-M. Park, "Investigation of Crystallization Behaviors of Nitrogen-doped Ge2Sb2Te5 Films by Hermomechanical Characteristics" 94 : 061904-, 2009
10 T.-Y. Yang, "Inhibition of the Electrostatic Force-induced Atomic Migration in Ge2Sb2Te5 by Nitrogen Doping" 13 : H321-H323, 2010
1 W. Welnic, "Unraveling the Interplay of Local Structure and Physical Properties in Phase-change Materials" 5 : 56-62, 2006
2 한승민, "Thermomechanical properties and mechanical stresses of Ge2Sb2Te5 films in phase-change random access memory" ELSEVIER SCIENCE SA 517 (517): 848-852, 200811
3 T. H. Jeong, "Study of Oxygen-doped GeSbTe Film and its Effect as an Interface Layer on the Recording Properties in the Blue Wavelength" 40 : 1609-1612, 2001
4 N. Yamada, "Structure of Laser-crystallized Ge2Sb2+xTe5 Sputtered Thin Films for Use in Optical Memory" 88 : 7020-7028, 2000
5 I. Friedrich, "Structural Transformations of Ge2Sb2Te5 Films Studied by Electrical Resistance Measurements" 87 : 4130-4134, 2000
6 K. Shportko, "Resonant Bonding in Crystalline Phase-change Materials" 7 : 653-658, 2008
7 K. Kim, "Reliability Investigations for Manufacturable High Density PRAM" 157-162, 2005
8 R. Kojima, "Nitrogen Doping Effect on Phase Change Optical Disks" 37 : 2098-2103, 1998
9 I.-M. Park, "Investigation of Crystallization Behaviors of Nitrogen-doped Ge2Sb2Te5 Films by Hermomechanical Characteristics" 94 : 061904-, 2009
10 T.-Y. Yang, "Inhibition of the Electrostatic Force-induced Atomic Migration in Ge2Sb2Te5 by Nitrogen Doping" 13 : H321-H323, 2010
11 H. Kölpin, "Influence of Si and N Additions on Structure and Phase Stability of Ge2Sb2Te5 Thin Films" 21 (21): 435501-, 2009
12 T.-Y. Yang, "Influence of Dopants on Atomic Migration and Void Formation in Molten Ge2Sb2Te5 under High-amplitude Electrical-pulse" 2012
13 K. Wang, "Influence of Bi Doping upon the Phase Change Characteristics of Ge2Sb2Te5" 96 : 5557-5562, 2004
14 A. Pirovano, "Electronic Switching in Phase-change Memories" 51 : 452-459, 2004
15 S.-W. Nam, "Electric-field-induced Mass Movement of Ge2Sb2Te5 in Bottleneck Geometry Line Structures" 12 : H155-H159, 2009
16 S. O. Ryu, "Crystallization behavior and physical properties of Sb-excess Ge2Sb2+xTe5 thin films for phase change memory (PCM) devices" ELECTROCHEMICAL SOC INC 153 : G234-G237, 2006
17 R. M. Shelby, "Crystallization Dynamics of Nitrogen-doped Ge2Sb2Te5" 105 : 104902-, 2009
18 T. H. Jeong, "Crystal Structure and Microstructure of Nitrogen-doped Ge2Sb2Te5 Thin Film" 39 : 2775-2779, 2000
19 Y. Kim, "Changes in the Electronic Structures and Optical Band Gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during Phase Transition" 90 : 171920-, 2007
20 T.-Y. Yang, "Atomic Migration in Molten and Crystalline Ge2Sb2Te5 under High Electric Field" 95 : 032104-, 2009
21 R. Pearson, "Absolute Electronegativity and Hardness: Application to Inorganic Chemistry" 27 : 734-740, 1988
22 E. Cho, "Ab Initio Study on Influence of Dopants on Crystalline and Amorphous Ge2Sb2Te5" 109 : 043705-, 2011