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    RISS 인기검색어

      A Study of the Effect of UV Laser Annealing on a-SiC films for Structure Ordering

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      https://www.riss.kr/link?id=E805304

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      다국어 초록 (Multilingual Abstract)

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      A UV laser annealing was carried out on amorphous SiC films which were deposited on Si substrate by using plasma-enhanced chemical-vapour deposition. Scanning electron microscope micrographs taken from the surfaces of the films exhibited images of grains that were not presented before the UV laser treatment. Fourier-transformed infrared and X-ray diffraction experiments identified those grains as microcrystals of SiC and Si transformed from the amorphous state. Auger electron spectroscopy depth profiling analysis showed that there were more Si atoms than C atoms in the layer. The resistivities of films changed abruptly from 170 Ωcm to 226 kΩcm after the UV laser annealing.
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      A UV laser annealing was carried out on amorphous SiC films which were deposited on Si substrate by using plasma-enhanced chemical-vapour deposition. Scanning electron microscope micrographs taken from the surfaces of the films exhibited images of gra...

      A UV laser annealing was carried out on amorphous SiC films which were deposited on Si substrate by using plasma-enhanced chemical-vapour deposition. Scanning electron microscope micrographs taken from the surfaces of the films exhibited images of grains that were not presented before the UV laser treatment. Fourier-transformed infrared and X-ray diffraction experiments identified those grains as microcrystals of SiC and Si transformed from the amorphous state. Auger electron spectroscopy depth profiling analysis showed that there were more Si atoms than C atoms in the layer. The resistivities of films changed abruptly from 170 Ωcm to 226 kΩcm after the UV laser annealing.

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      목차 (Table of Contents)

      • Ⅰ. INTRODUCTION
      • Ⅱ. EXPERIMENTAL METHODES
      • Ⅲ. RESULTS AND DISCUSSION
      • Ⅳ. CONCLUSIONS
      • REFERENCES
      • Ⅰ. INTRODUCTION
      • Ⅱ. EXPERIMENTAL METHODES
      • Ⅲ. RESULTS AND DISCUSSION
      • Ⅳ. CONCLUSIONS
      • REFERENCES
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