고 안정성 전구체를 사용한 InP/ZnS 반도체 나노입자 합성 및 발광 특성 향상 = Improved Luminescent Characterization and Synthesis of InP/ZnS Quantum Dot with High-Stability Precursor

다국어 초록 (Multilingual Abstract)

We report a synthesis of non-toxic InP nanocrystals using non-pyrolytic precursors instead of pyrolytic and unstable tris(trimethylsilyl)phosphine, a popular precursor for synthesis of InP nanocrystals. In this study, InP nanocrystals are successfully synthesized using hexaethyl phosphorous triamide (HPT) and the synthesized InP nanocrystals showed a broad and weak photoluminescence (PL) spectrum. As synthesized InP nanocrystals are subjected to further surface modification process to enhance their stability and photoluminescence. Surface modification of InP nanocrystals is done at $230^{\circ}C$ using 1-dodecanethiol, zinc acetate and fatty acid as sources of ZnS shell. After surface modification, the synthesized InP/ZnS nanocrystals show intense PL spectra centered at the emission wavelength 612 nm through 633 nm. The synthesized InP/ZnS core/shell structure is confirmed with X-ray diffraction (XRD) and Inductively Coupled Plasma - Atomic Emission Spectrometer (ICP-AES). After surface modification, InP/ZnS nanocrystals having narrow particle size distribution are observed by Field Emission Transmission Electron Microscope (FE-TEM). In contrast to uncapped InP nanocrystals, InP/ZnS nanocrystals treated with a newly developed surface modified procedure show highly enhanced PL spectra with quantum yield of 47%.