Admittance 분광법에 의한 CdTe단결정의 깊은 에너지 준위에 관한 연구 = A Study on the Deep Energy Levels of CdTe Single Crystal by Admittance Spectroscopy

국문 초록 (Abstract)

수직 Bridgman 법으로 성장시킨 CdTe 단결정을 In/CdTe Schottky 다이오드를 제작하여 전류-전압, admittance spectroscopy 특성을 조사하였다. 전류-전압 특성으로부터 구한 CdTe의 장벽 높이는 1.023 eV이였고, 또한 온도의 함수로 측정한 admittance spectroscopy로부터 양공의 방출률과 trap의 에너지 준위를 구하였다.

다국어 초록 (Multilingual Abstract)

CdTe single crystal was grown by the vertical Bridgman technique. The p-CdTe Schottky diode was fabricated by thermal deposition of Au and In electrode. Schottky barrier height(SBH) was 1.023 eV, which was determined from the current-voltage characteristics at the bias voltage range of -0.5∼0.5 V. The emission rate and energy level of trap were determined from the measurements of admittance as a function of temperature.