채널 식각형 비정질 실리콘 박막 트랜지스터에서 배면에 수소 이온 도핑효과 = Hydrogen ion doping effect on the free surface of the back channel etched a-Si:H TFT

다국어 초록 (Multilingual Abstract)

We have studied the effect of the hydrogen ion doping on the free surface of back channel etched a Si:H TFTs. The hydrogen ion doping on the back channel etched TFT reduces the off-state photo leakage current by one order of magnitude. The reduction of the photo-leakage current is due to the creation of defect states at the free surface by hydrogen ion doping. After hydrogen ion doping on the free surface, the field effect mobility change little, but the threshold voltage increases, which is due to the state creation in a-Si:H by ionized H ions.
Furthermore, the off-state leakage current under frontlight illumination can be reduced by 2 orders magnitude by hydrogen ion doping on the back channel of a Si:H TFT.