Ultrathin-body SOI MOSFETs에서 면방향에 따른 정공의 이동도 증가 = Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body(UTB) Silicon-on-insulator(SOI) Metal Oxide Semiconductors Field Effect Transistor

다국어 초록 (Multilingual Abstract)

We investigated the characteristics of UTB-SOI pMOSFETs with SOI thickness($T_{SOI}$) ranging from 10 nm to 1 nm and evaluated the dependence of electrical characteristics on the silicon surface orientation. As a result, it is found that the subthreshold characteristics of (100)-surface UTB-SOI pMOSFETs were superior to (110)-surface. However, the hole mobility of (110)-surface were larger than that of (100)-surface. Especially, the enhancement of effective hole mobility at the effective field of 0.1 MV/cm was observed from 3-nm to 5-nm SOI thickness range.

참고문헌 (Reference)

1 P. Balk, "The Si-SiO2 System" Elsevier 234-, 1988

2 S. Tagaki, "Sub-band structure engineering for advanced CMOS channels" 49 : 684-, 2005

3 J. Welser, "Strain Dependence of the Performance Enhancement in Strained-Si n-MOSFETs" 373-, 1994

4 S. Tagaki, "Mobility enhancement of SOI MOSFETs due to subband modulation in ultrathin SOI films" 37 : 1289-, 1998

5 H. Shang, "Mobility and CMOS Device/ Circuits on sub-10 nm Ultra Thin Body SOI" 78-, 2005

6 G. Tsutusi, "Experimental study on superior mobility in (110)-oriented UTB SOI pMOSFETs" 26 (26): 836-, 2005

7 K. Uchida, "Experimental Study on Carrier Transport Mechanism in Ultrathin-body SOI MOSFETs" 8-, 2003

8 H. Nakamura, "Effects of selecting channel direction in improving performance of sub-100 nm MOSFETs fabricated on (110) surface si substrate" 43 (43): 1723-, 2004