Structural and Electronic Characteristics of ZnO Thin Films dc Sputtered on Sapphire (0001) Substrates

다국어 초록 (Multilingual Abstract)

Using reactive dc magnetron sputtering, we observed the epitaxial growth of ZnO films on Al2O3
(0001) substrates at several temperatures ranging from 300 to 600℃. The structural properties
and the quality of the ZnO thin films were characterized by using X-ray diffraction (XRD). XRD
measurements showed that the ZnO films were highly c-axis-oriented with in-plane epitaxy and
that the linewidth of the (0002) peak was sensitive to a variation in the substrate temperature.
Based on the full-width at half-maximum of (0002) peak, the best crystal quality of the ZnO films
was obtained at a growth temperature of 500℃ and the lattice strain was linearly relaxed as
the growth temperature increased. Near-edge X-ray absorption ne structure (NEXAFS) spectra
confirmed the XRD result for the growth orientation by showing that the c-axis of the ZnO film
was normal to the surface of the film, at least in the neighborhood of the absorbing atom. The
Hall-effect measurement revealed that the mobility of the deposited films was 4.14 cm2V..1s..1.e=JPIWO0601

다국어 초록 (Multilingual Abstract)

Using reactive dc magnetron sputtering, we observed the epitaxial growth of ZnO films on Al2O3
(0001) substrates at several temperatures ranging from 300 to 600℃. The structural properties
and the quality of the ZnO thin films were characterized by using X-ray diffraction (XRD). XRD
measurements showed that the ZnO films were highly c-axis-oriented with in-plane epitaxy and
that the linewidth of the (0002) peak was sensitive to a variation in the substrate temperature.
Based on the full-width at half-maximum of (0002) peak, the best crystal quality of the ZnO films
was obtained at a growth temperature of 500℃ and the lattice strain was linearly relaxed as
the growth temperature increased. Near-edge X-ray absorption ne structure (NEXAFS) spectra
confirmed the XRD result for the growth orientation by showing that the c-axis of the ZnO film
was normal to the surface of the film, at least in the neighborhood of the absorbing atom. The
Hall-effect measurement revealed that the mobility of the deposited films was 4.14 cm2V..1s..1.e=JPIWO0601

참고문헌 (Reference)

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