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      Switched-currents : an analogue technique for digital technology

      한글로보기

      https://www.riss.kr/link?id=M1242049

      • 저자
      • 발행사항

        London, U.K. : P. Peregrinus on behalf of the Institution of Electrical Engineers, c1993

      • 발행연도

        1993

      • 작성언어

        영어

      • 주제어
      • DDC

        621.3815 판사항(20)

      • ISBN

        0863412947

      • 자료형태

        단행본(다권본)

      • 발행국(도시)

        England

      • 서명/저자사항

        Switched-currents : an analogue technique for digital technology / edited by C. Toumazou, J.B. Hughes & N.C. Battersby.

      • 형태사항

        xxiii, 594 p. : ill. ; 21 cm.

      • 총서사항

        IEE circuits and systems series ; 5

      • 일반주기명

        Includes bibliographical references and index.

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      목차 (Table of Contents)

      • CONTENTS
      • 1 Introduction / C. Toumazou ; J. B. Hughes ; N. C. Battersby = 1
      • 1.1 VLSI Technology = 1
      • 1.2 The Analogue Dilemma = 1
      • 1.3 Switched-Currents = 3
      • CONTENTS
      • 1 Introduction / C. Toumazou ; J. B. Hughes ; N. C. Battersby = 1
      • 1.1 VLSI Technology = 1
      • 1.2 The Analogue Dilemma = 1
      • 1.3 Switched-Currents = 3
      • 1.4 An Analogue Technique For Digital Technology = 3
      • 1.5 Book Style = 4
      • 1.6 Conclusion = 7
      • References = 8
      • 2 The Evolution of Analogue Sampled-Data Signal Processing / N. C. Battersby ; C. Toumazou = 9
      • 2.1 Introduction = 9
      • 2.2 The Evolution of Analogue Sampled-Data Techniques = 9
      • 2.2.1 Early work = 10
      • 2.2.2 Bucket brigade devices = 10
      • 2.2.3 Charge coupled devices = 11
      • 2.2.4 Switched-capacitors = 13
      • 2.3 The Role of Analogue Sampled-Data Signal Processing = 16
      • 2.4 Processing Trends and their Irnpact on Analogue Circuits = 18
      • 2.5 Current-Mode Analogue Signal Processing = 23
      • 2.6 Summary = 25
      • References = 25
      • Basic Cells
      • 3 Switched-Current Architectures and Algorithms / J. B. Hughes ; N. C. Bird ; I. C. Macbeth = 30
      • 3.1 Introduction = 30
      • 3.2 Switched-Capacitor Background = 30
      • 3.2.1 Non-inverting integrator = 31
      • 3.2.2 Inverting integrator = 32
      • 3.2.3 Inverting amplifier = 32
      • 3.2.4 Generalised integrator = 33
      • 3.2.5 Subtracting integrator = 34
      • 3.2.6 Switched-capacitor characteristics = 35
      • 3.3 Switched-Current Systems = 35
      • 3.4 Delay Modules = 37
      • 3.4.1 Current memory cell = 37
      • 3.4.2 Delay cell = 38
      • 3.4.3 Delay line = 39
      • 3.5 lntegrator Modules = 39
      • 3.5.1 Non-inverting integrator = 39
      • 3.5.2 Non-inverting damped integrator = 41
      • 3.5.3 Sensitivity = 43
      • 3.5.4 Inverting damped integrator = 44
      • 3.5.5 Inverting damped amplifier = 45
      • 3.5.6 Generalised integrator = 46
      • 3.5.7 Bilinear z-transform integrator = 48
      • 3.5.8 Comparison with the switched-capacitor integrator = 49
      • 3.5.9 Integrator-based biquadratic section = 49
      • 3.6 Differentiator Modules = 54
      • 3.6.1 Inverting differentiator = 54
      • 3.6.2 Generalised inverting differentiator = 55
      • 3.6.3 Non-inverting differentiator = 57
      • 3.6.4 Generalised non-inverting differentiator = 59
      • 3.6.5 Bilinear z-transform differentiator = 61
      • 3.6.6 Differentiator-based biquadratic section = 62
      • 3.7 Filter Synthesis Example 6th Order Lowpass Filter = 64
      • 3.8 Summary = 68
      • References = 69
      • 4 Switched-Current Limitations and Non-Ideal Behaviour / J. B. Hughes ; W. Redman-White = 71
      • 4.1 Introduction = 71
      • 4.2 Mismatch Errors = 71
      • 4.2.1 Unity gain Current memory = 71
      • 4.2.2 Non-unity gain current memory = 76
      • 4.3 Output-Input Conductance Ratio Errors = 77
      • 4.3.1 Memory cell response with conductance ratio errors = 78
      • 4.3.2 Integrator response with conductance ratio errors = 81
      • 4.3.3 Comparison with switched-capacitor integrator = 84
      • 4.3.4 Simulations = 85
      • 4.4 Settling Errors = 86
      • 4.4.1 Underdamped response = 87
      • 4.4.2 Critically damped response = 88
      • 4.4.3 Overdamped response = 88
      • 4.4.4 Memory cell response with settling errors = 90
      • 4.4.5 Integrator response with settling errors = 93
      • 4.4.6 Comparison with switched-capacitor integrator = 98
      • 4.4.7 Simulations = 99
      • 4.5 Charge Injection Errors = 99
      • 4.5.1 Switched-capacitor charge injection = 100
      • 4.5.2 Current memory charge injection = 103
      • 4.5.3 Analysis of charge injection errors = 108
      • 4.5.4 Memory Cell response with charge injection errors = 111
      • 4.5.5 Integrator frequency response with charge injection errors = 113
      • 4.6 Noise Errors = 117
      • 4.6.1 Noise analysis of switched-current memory cells = 117
      • 4,6.1.1 Simulations = 121
      • 4.6.1.2 Correlated double sampling = 121
      • 4.6.1.3 Dynamic range = 123
      • 4.6.2 Integrator noise analysis = 125
      • 4.6.2.1 Simulations = 129
      • 4.6.2.2 Dynamic range = 130
      • 4.7 SummaTy = 131
      • References = 134
      • 5 Noise in Switched-Current Circuits / S. J. Daubert = 136
      • 5.1 Overview = 136
      • 5.2 Transistor Noise = 137
      • 5.3 Current Mirror Noise = 139
      • 5.4 Current Copier Noise = 143
      • 5.4.1 Relative importance of switch and transconductor noise in a current copier = 144
      • 5.4.2 Transfer function approach = 147
      • 5.5 ConcIusion = 154
      • References = 154
      • 6 Switched-Current Circuit Design Tecniques / J. B. Hughes ; K. W. Moulding ; D. M. Pattullo = 156
      • 6.1 Introduction = 156
      • 6.2 Feedback Techniques = 156
      • 6.2.1 Op-amp active memory cell = 157
      • 6.2.2 Grounded-gate active memory cell = 160
      • 6.2.3 Simple cascode memory cell = 163
      • 6.2.4 Folded-cascode memory cell = 167
      • 6.2.5 Regulated cascode = 170
      • 6.2.6 Regulated folded-cascode memory cell = 172
      • 6.2.7 Integrators = 172
      • 6.3.1 Basic fully-differential current memory cell = 174
      • 6.3.2 Folded-cascode fully-differential current memory and integrator = 177
      • 6.3.3 Single-ended to fully-differential equivalence = 179
      • 6.3.4 Charge injection = 181
      • 6.4 Summary = 188
      • 7 Class AB Switched-Current Techniques / N. C. Battersby ; C. Toumazou = 191
      • 7.1 Introduction = 191
      • 7.2 Memory Cell = 192
      • 7.3 Filter Building Blocks = 194
      • 7.3.1 Delay cells = 194
      • 7.3.2 Integrator circuits = 194
      • 7.3.3 Differentiator circuits = 196
      • 7.4 Performance Limitations = 197
      • 7.5 Biquadratic Filter Example = 200
      • 7.6 Conclusions = 202
      • Acknowledgements = 202
      • References = 202
      • Filters
      • 8 Switched-Current Filters / N. C. Battersby ; C. Toumazou = 204
      • 8.1 Introduction = 204
      • 8.2 Biquadratic Filter Sections = 204
      • 8.2.1 Integrator based sections = 205
      • 8.2.2 Example: integrated biquadratic filter = 207
      • 8.2.3 Differentiator based sections = 212
      • 8.3 Ladder Filters = 214
      • 8.3.1 Example: integrated elliptic filter = 214
      • 8.4 FIR Filters = 222
      • 8.5 Wave Active Filters = 223
      • 8.6 Transposition of Switched-Capacitor Filters = 223
      • 8.7 Switched-Transconductance Filters = 223
      • 8.7.1 Switched-transconductance concept = 224
      • 8.7.2 Composite elements = 226
      • 8.7.3 Filter applications = 227
      • Acknowledgements = 230
      • References = 230
      • 9 A Svitched-Capacitor to Switched-Current Conversion Method / G. W. Roberts ; A. S. Sedra = 232
      • 9.1 Introduction = 232
      • 9.2 The Switched-Current Technique = 233
      • 9.3 Comparing the SFGs of SI and SC Integrator Circuits = 235
      • 9.4 SI Filter Circuits with Finite Transmission Zeros = 241
      • 9.5 SI Filter Circuits using Bilinear Integrators = 245
      • 9.6 Conclusions = 250
      • Acknowledgement = 251
      • References = 251
      • 10 Switched-Current Video Signal Processing / J. B. Hughes ; K. W. Moulding = 252
      • 10.1 Introduction = 252
      • 10.2 Basic Signal Processing Cells = 253
      • 10.2.1 Delay line = 253
      • 10.2.2 Integrator and differentiator cells = 255
      • 10.2.3 FIR cells = 255
      • 10.3 Practical SI Signal Processing Cells = 256
      • 10.3.1 Active negative feedback = 256
      • 10.3.2 Fully differential circuits = 259
      • 10.4 Mermory Cell Design = 261
      • 10.4.1 Transmission error = 261
      • 10.4.1.1 Conductance ratio error = 261
      • 10.4.1.2 Charge injection errors = 262
      • 10.4.2 Settling behaviour = 263
      • 10.4.2.1 Linear settling = 263
      • 10.4.2.2 Non-Iinear settling = 265
      • 10.4.3 Signal-to-noise ratio = 265
      • 10.5 Video 1C Test Circuit = 266
      • 10.5.1 Output waveforms = 269
      • 10.5.2 Amplitude responses = 269
      • 10.5.4 Harmonic distortion = 271
      • 10.5.5 Summary of performance = 272
      • 10.6 Discussion and Conclusions = 272
      • 10.7 References = 273
      • Argendix 10A = 274
      • Appendix 10B = 275
      • Appendix 10C = 277
      • 11 Switched-Current Wave Analogue Filters / A. Rueda ; A. Y$$\acute u$$fera ; J. L Huertas = 279
      • 11.1 Introduction and Motivations = 279
      • 11.2 Wave Filters = 281
      • 11.2.1 General principles = 281
      • 11.2.2 Wave filter synthesis procedure = 284
      • 11.2.3 Scaling techniques = 287
      • 11.3 Switched-Current Wave Filter Design = 287
      • 11.3.1 Basic building blocks = 288
      • 11.3.2 Limitations and non-idealities of the building blocks = 291
      • 11.4 Programmable Band-pass Filter Structures = 295
      • 11.4.1 Filter synthesis = 295
      • 11.4.2 Programmable filter implementation = 296
      • 11.5 Design Examples = 297
      • 11.6 Conclusions = 302
      • References = 302
      • Data Converters
      • 12 Algorithmic and Pipelined A/D Converters / D. Nairn = 304
      • 12.1 Introduction = 304
      • 12.2 Architectures For Switched-Current ADCs = 305
      • 12.2.1 Algorithmic ADCs = 305
      • 12.2.2 Pipelined ADCs = 307
      • 12.2.3 Summary = 308
      • 12.3 Building Blocks = 308
      • 12.3.1 Current-samplers = 308
      • 12.3.2 Current divide-by-two = 312
      • 12.3.3 Current comparators = 313
      • 12.3.4 Switches in switched-current circuits = 314
      • 12.3.5 Summary = 316
      • 12.4 Converter Implementation and Examples = 316
      • 12.4.1 Algorithmic ADCs = 316
      • 12.4.2 Pipelined ADCs = 319
      • 12.5 Limitations = 319
      • 12.5.1 Systematic errors = 319
      • 12.5.2 Random errors = 320
      • 12.6 Conclusions = 320
      • References = 321
      • 13 High Resolution Algorithmic A/D Converters based on Dynamic Current Memories / P. Deval =323
      • 13.1 Introduction = 323
      • 13.2 CMOS dynamic current memory = 323
      • 13.3 Conversion algorithm with reduced dynamic range of the memorised currents = 325
      • 13.4 Conversion error = 327
      • 13.5 Design of dynamic current memories for use in cyclic ADCs = 328
      • 13.5.1 Equivalent time constant of the memory = 328
      • 13.5.2 Charge injection error = 330
      • 13.5.3 Sampled noise = 334
      • 13.5.4 Leakage currents = 335
      • 13.5.5 Output conductance = 336
      • 13.5.6 Current comparison = 340
      • 13.5.7 Comparator offset compensation = 341
      • 13.5.8 Clipping the comparator's input voltage = 342
      • 13.5.9 Controlling the "on" conductance of the sampling switch = 343
      • 13.5.10 Input multiplexer = 343
      • 13.6 Technology scaling = 344
      • 13.7 Pipelined converter = 344
      • 13.8 Experimental results and measurements = 345
      • 13.9 Summary = 347
      • Acknowledgements = 347
      • References = 348
      • 14 Building Blocks for Switched-Current Sigma-Delta Converters / G. W. Roberts ; P. J. Crawley = 350
      • 14.1 Introduction = 350
      • 14.2 Sigma-Delta A/D Conversion = 350
      • 14.3 The SI Circuit Technique = 354
      • 14.4 Additional Current-Mode Circuits = 363
      • 14.5 SI DISDM Design = 365
      • 14.5.1 The current mirror design approach = 365
      • 14.5.2 The component-invariant design approach = 376
      • 14.6 Conclusions = 379
      • Acknowledgements = 379
      • References = 380
      • 15 Continuous Calibration D/A Conversion / W. Groeneveld ; H. Schouwenaars ; C. Bastiaansen ; H. Termeer = 381
      • 15.1 Accuracy of Audio D/A Converters = 381
      • 15.1.1 Introduction = 381
      • 15.1.2 Linearity considerations = 381
      • 15.1.3 Basic calibration principle = 382
      • 15.1.4 Imperfections = 383
      • 15.1.5 Numerical example = 385
      • 15.1.6 Improved calibration technique = 386
      • 15.1.7 Continuous current calibration = 388
      • 15.2 16-bit Audio D/A Converter Architecture = 388
      • 15.2.1 Block diagram = 388
      • 15.2.2 Calibration circuitry and current cell = 389
      • 15.2.3 Measurement results = 390
      • 15.3 Calibrated Noise Shaping D/A Converter = 393
      • 15.3.1 Introduction = 393
      • 15.3.2 General design considerations = 394
      • 15.3.3 Converter architecture considerations = 396
      • 15.3.4 D/A converter block diagram = 397
      • 15.3.5 Reference current adjustment = 398
      • 15.3.6 Digital continuous calibration = 399
      • 15.3.7 Bi-directional calibrating current cell = 399
      • 15.3.8 Measurement results = 400
      • 15.4 Conclusions = 402
      • Acknowledgements = 402
      • References = 403
      • Other Applications
      • 16 Dynamic Current Mirrors / G. Wegmann = 404
      • 16.1 Introduction = 404
      • 16.2 Current Copiers = 405
      • 16.2.1 Principle of current copier and dynamic current mirrors = 405
      • 16.2.2 Principal accuracy limitations = 406
      • 16.2.3 Cascoded structure = 408
      • 16.2.4 Current copier with reduced transconductance gmm△ = 409
      • 16.2.5 Dynamic current mirror structures = 410
      • 16.2.6 Multiple dynamic current mirrors (1:1) = 412
      • 16.2.7 Dividing current mirror: principle of the division by 2($$I_out $$$$I_in$$/2) = 414
      • 16.3 Accuracy Limitations = 417
      • 16.3.1 Influence of drain voltage variations = 417
      • 16.3.1.1 Output conductance gds = 417
      • 16.3.1.2 Capacitive divider $$C_gd$$ - C = 418
      • 16.3.1.3 Direct charge flow path = 419
      • 16.3.2 Leakage currents = 419
      • 16.3.3 Charge injection by analogue switches = 421
      • 16.3.3.1 Interfering parameters = 420
      • 16.3.3.2 Strategies = 422
      • 16.3.3.3 Reduction of the turn-on voltage of the sampling switch = 423
      • 16.3.3.4 Two-phase feedback = 425
      • 16.4 Noise Analysis = 426
      • 16.4.1 Noise sources = 426
      • 16.4.2 Analysis of direct noise sources = 427
      • 16.4.3 Description of sampling and autozeroing effects = 428
      • 16.4.4 Analysis of sampling and autozeroing transfer functions = 431
      • 16.4.5 Calculation of sample-and-hold component △$$V_h$$(f) = 433
      • 16.4.6 Calculation of the direct component △$$V_D$$(f) = 433
      • 16.4.7 Autozero transfer function =433
      • 16.4.8 Voltage noise spectral power density $$S_V$$(f) = 435
      • 16.4.9 Analysis of aliasing effects using the equivalent noise bandwidth technique = 436
      • 16.4.9.1 White noise in first and second-order low-pass filters = 436
      • 16.4.9.2 White noise aliasing effect in a current copier = 437
      • 16.4.9.3 1/f noise in first and second-order low-pass filter = 438
      • 16.4.9.4 1/f aliasing effect in a current copier = 439
      • 16.4.10 Noise spectral power density $$S_v$$(f) = 440
      • 16.4.10.1 White noise due to main transistor Tm = 440
      • 16.4.10.2 Noise spectral power density $$S_VT$$(f) in the baseband = 441
      • 16.5 Dynamic Behaviour = 442
      • 16.5.1 Critical switching configurations = 442
      • 16.5.1.1 Influence of clock delay = 442
      • 16.5.1.2 Influence on the output current - AC and DC = 444
      • 16.5.2 Speed-accuracy trade-off = 445
      • 16.5.2.1 Settling time constant = 445
      • 16.5.2.2 Speed-accuracy trade-off = 445
      • 16.6 Measurements = 446
      • 16.6.1 AC measurements = 447
      • 16.6.1.1 Variations of input voltage $$V_in$$(t) and output current $$I_out$$(t) = 447
      • 16.6.2 DC measurements = 448
      • 16.6.2.1 Multiplying mirror of ratio 1 = 448
      • 16.6.2.2 Basic cell with a reduced transconductance $$g_mm$$△ = 450
      • 16.6.2.3 Influence of the clock frequency = 451
      • 16.6.3 Noise measurements = 452
      • 16.7 Conclusion = 453
      • References = 453
      • Appendix 16A = 456
      • Appendix 16B = 458
      • 17 Switched-Current Cellular Neural Networks for Image Processing / A. Rodriguez-V$$\acute a$$zquez ; S. Espejo ; J. Huertas ; R. Dom$$\acute i$$nguez-Castro = 459
      • 17.1 Introduction = 459
      • 17.2 The DT-CNN Model = 461
      • 17.2.1 Network architecture and dynamics = 461
      • 17.2.2 Network processing and operating modes = 463
      • 17.3 Basic Building Blocks for SI DTCNNs = 466
      • 17.3.1 Cell operators = 466
      • 17.3.2 Current-mode replication and scaling = 467
      • 17.3.3 Cell non-linearity = 468
      • 17.3.4 Delay block = 470
      • 17.3.5 Current mode CNN conceptual cell schematics = 471
      • 17.4 CMOS Current-Mode CNN Design Issues = 472
      • 17.4.1 CMOS mirror circuits static non-idealities and sizing equations = 472
      • 17.4.2 CMOS current mode dynamic operators non-idealities = 477
      • 17.4.3 Programmability issues for current-mode blocks = 477
      • 17.4.4 Bias current selection area, power and reliability = 479
      • 17.5 lnput-Output Strategies = 480
      • 17.6 Discussion and Perspectives = 482
      • References = 483
      • Analysis Simulation and Test
      • 18 Test for Switched-Current Circuits / P. Wrighton ; G. Taylor ; I. Bell ; C. Toumazou = 487
      • 18.1 Introduction = 487
      • 18.2 Basic concepts for the test of SI cells = 488
      • 18.2.1 Injection and simulation of faults in SI cells = 489
      • 18.2.2 Fault detection and detectability measures = 490
      • 18.3 Test vector analysis = 493
      • 18.3.1 Effect of test stimulus period = 494
      • 18.3.2 Different profile test stimuli = 496
      • 18.3.2.1 Overall coverage = 496
      • 18.3.2.2 Transistor level analysis = 497
      • 18.3.2.3 Individual faults groups and failure modes = 499
      • 18.4 Built In Self Test for SI cells = 501
      • 18.4.1 Functional inversion test circuit = 502
      • 18.4.1.1 Fault coverage = 505
      • 18.5 Conclusions and future work = 506
      • Acknowledgements = 507
      • References = 507
      • 19 Analysis of Switched-Current Filters / A. C. M. de Queiroz = 508
      • 19.1 Introduction = 508
      • 19.2 Frequency-Domain Nodal Analysis of Switched-Current Filters = 509
      • 19.3 Refinements to the Basic Algorithm = 512
      • 19.4 Voltage Sources in Nodal Analysis = 513
      • 19.5 Interpolation of z-transforms = 514
      • 19.6 Time-Domain Analysis = 517
      • 19.7 Sensitivity Analysis = 518
      • 19.8 Conclusions = 525
      • References = 526
      • 20 Non-linear Behaviour of Switched-Current Memory Circuits / G. W. Roberts ; P. J. Crawley = 528
      • 20.1 Introduction = 528
      • 20.2 Basic Memory Cell Operation = 529
      • 20.3 Small-Signal Behaviour of the Memory Cell = 532
      • 20.4 Large-Signal Behaviour of the Memory Cell = 536
      • 20.4.1 A total harmonic distortion bound = 539
      • 20.4.2 Comparing THD bound with simulation results = 543
      • 20.4.3 Experimental confirmation of the THD bound = 545
      • 20.5 Conclusions = 545
      • Acknowledgement = 546
      • References = 546
      • Future Directions
      • 21 GaAs MESFET Switched-Current Circuits / C. Toumazou ; N. C. Battersby = 548
      • 21.1 Introduction = 548
      • 21.2 Ga-As Versus Silicon Technology For Analogue Design = 548
      • 21.3 MESFET Modelling = 550
      • 21.4 GaAs MESFET Current-Mirror Techniques = 553
      • 21.4.1 Cross-coupled MESFET pair = 553
      • 21.4.2 Linear current-mirror = 554
      • 21.4.3 Cascoding = 556
      • 21.6 Towards GaAs MESFET Switched-Current Techniques = 559
      • 21.6.1 Basic memory cell = 560
      • 21.6.2 Linear non-inverting memory cell = 561
      • 21.6.3 Fully differential, linear transconductance GaAs switched-current cell = 563
      • 21.6.4 Generalised integrator = 564
      • 21.6.5 Performance limitations = 565
      • 21.7 Circuit techniques for enhanced performance = 567
      • 21.7.1 Dummy switch compensation = 567
      • 21.7.2 Cascoded memory cells = 568
      • 21.8 Simulation results = 569
      • 21.8.1 Fully cascoded memory cell = 570
      • 21.8.2 Damped integrator = 572
      • 21.8.3 Biquadratic filter example = 573
      • 21.9 Discussion and Conclusion = 574
      • Acknowledgements = 575
      • References = 575
      • 22 Switched-Currents: State-of-the-Art and Future Directions / C. Toumazou ; N. C. Battersby ; J. B. Hughes = 577
      • 22.1 Introduction = 577
      • 22.2 Switched-currents: an analogue technique for digital technology = 577
      • 22.3 Future Research Directions = 584
      • 22.4 Towards total memory cell error cancellation schemes = 584
      • 22.4.1 Algorithmic memory cell = 585
      • 22.4.2 $$S^2 $$I memory cell = 586
      • 22.3.3 Noise performance = 588
      • 22.3.4 Towards low power =. 588
      • 22.3.5 Tuning schemes = 588
      • 22.3.6 Filter building blocks = 589
      • 22.3.7 Data converters = 589
      • 22.3.8 GaAs technology = 589
      • 22.3.9 CAD, simulation and test = 589
      • 22.4 Conclusions = 590
      • References = 590
      • Index = 591
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