씨앗층이 바륨훼라이트 박막의 형성과 자기적 성질에 미치는 영향

다국어 초록 (Multilingual Abstract)

Barium ferrite thin films were reactively deposited with Fe and BaO composite targets by a facing tergects sputtering unit. When thermally oxidized silicon wafers were used as substrates, minimum substrate heating of 750℃ was necessary for the perfect c-axis alignment in barium ferrite films. To lower the critical substrate temperature for the good c-axis alignment, such seed layers as ZnO, α-Fe₂O₃ and γ-Fe₂O₃ were tested. The excellent c-axis algnment of BaM was obtained at a substrate temperature of 600℃ on ZnO seed layer whose (002) plane was parallel to the substrate surface. The magnetic properties of the BaM film showed saturation magnetization of 295 emu/cc, perpendicular coercivity of 1.7 kOe and squareness of 0.75. Optimum deposition rate of 230 Å/min was obtained with the composite target and this was 5 to 20 times higher than those of other investigators with oxide targets.