저전압구동 ZnS:Mn EL device의 제작 및 전기 광학적 특성조사 = Fabrication of the Low Driving Voltage ZnS:Mn EL Device and Investigation of its Electro-optical Properties

국문 초록 (Abstract)

ZnS:Mn TFEL device를 전자선 진공증착법으로 제작하여 전기광학적 특성에 관하여 조사하였다. $Ta_2O_5$ 박막의 산소 결핍에 따른 정전용량을 측정하기 위하여 산소분위기에서 열처리에 따른 AES(Auger electron spectroscopy)와 C-F를 측정하였다. 제작한 EL 소자의 전기장 발광 파장은 550~650nm 였으며 이것은 $Mn^{2+}$ 이온의 $3d^5$ 여기준위인 $^4T_1(^4G)$ 에서 $3d^5$ 기저준위인 $^6A_1(^S)$로의 내각전자전이 피크이다. 열처리를 수행하지 않은 $Ta_2O^5$를 절연층으로 사용한 EL 소자의 발광시작전압은 24~28V이고 색도 좌표값 X=0.5151, Y=0.4202인 황등색 발광을 하였다. $Ta_2O_5$를 절연층으로 사용한 소자가 저전압에서 구동이 가능하므로 EL 소자의 실용화가 기대된다.

다국어 초록 (Multilingual Abstract)

ZnS:Mn TFEL devices were fabricated by electron-beam evaporation method and then the electro-optical properties were investigated. To investigate the capacitance which was due to oxygen vacancy at the $Ta_2O_5$ thin film, AES(Auger Electron Spectroscopy) and C-F(capacitance-frequency) measurements were used. It was found that the capacitance was decreased by annealing the $Ta_2O_5$ film in oxygen ambience. From EL emission measurement, we observed the EL emission spectrum which had the peak range from 550nm and 650nm. This emission is associated with the transition from $^4T_1(^4G)$ first excited state to $^6A_1(^6S)$ ground state in the $3d^5$ energy level configuration of $Mn^{2+}$ occurs. The threshold voltage of EL device with $Ta_2O_5$ insulator layer was found to be 24V~28V. The CIE color coordinates of these emission are X=0.5151, Y=0.4202 which is yellowish orange emitting. The EL device using $Ta_2O_5$ insulator layer can be driven with a low voltage which is beneficial to the practical application.