Many investigations have been done, in recent years, of chalcogenide amorphous semi-conductors by electron spin resonance of doped Mn.
Such a technique is found to be useful for investigating the impurity effect and the structural change due to annea...
Many investigations have been done, in recent years, of chalcogenide amorphous semi-conductors by electron spin resonance of doped Mn.
Such a technique is found to be useful for investigating the impurity effect and the structural change due to annealing and photo-irradiation.
First, the amorphous structure is studied in detail; second, we show that the optical and electrical measurements reveal the effect of doped Mn from the microscopic point of view. Finally, the structural change due to annealing and photo-irradiation which is characteristic of lone pair amorphous semiconductors is described and the ESR study is shown to be useful in clarifying microscopically the structural change.