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Heavily tellurium (Te)-doped InGaP layers in tunnel junctions (TJs) grown by using metalorganic chemical vapor deposition (MOCVD) were investigated to improve the device performance of InGaP/InGaAs/Ge triple-junction solar cells. Three different dopin...
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RISS 인기검색어
Comparative Investigation of InGaP/InGaAs/Ge Triple-junction Solar Cells Using Different Te-Doped InGaP Layers in Tunnel Junctions
한글로보기https://www.riss.kr/link?id=A103562638
-
저자
정상현 (한국나노기술원) ; Chang Zoo Kim (Korea Advanced Nano Fab Center) ; Youngjo Kim (Korea Advanced Nano Fab Center) ; Dong-Hwan Jun (Korea Advanced Nano Fab Center) ; Ho Kwan Kang (Korea Advanced Nano Fab Center) ; 김호경 (서울과학기술대학교)
- 발행기관
- 학술지명
- 권호사항
-
발행연도
2016
-
작성언어
English
- 주제어
-
등재정보
KCI등재,SCI,SCIE,SCOPUS
-
자료형태
학술저널
-
수록면
792-796(5쪽)
-
KCI 피인용횟수
3
- 제공처
- 소장기관
-
0
상세조회 -
0
다운로드
부가정보
다국어 초록 (Multilingual Abstract)
Heavily tellurium (Te)-doped InGaP layers in tunnel junctions (TJs) grown by using metalorganic chemical vapor deposition (MOCVD) were investigated to improve the device performance of InGaP/InGaAs/Ge triple-junction solar cells. Three different doping techniques were employed to grow the Te-doped InGaP layers in the TJ; Te doping, Te and Si co-doping and Te pre-doping.
Compared to other samples, the external quantum efficiency (EQE) profiles in the InGaP top cell were found to be higher for the sample with Te pre-doping. Under a concentrated light condition, higher fill factor (FF) and conversion efficiency were also observed for the sample with Te pre-doping.
These indicate that the crystalline qualities of the upper TJ, composed of a p-GaAs/n-InGaP TJ, and the InGaP top cell were improved by using the Te pre-doping method.
Compared to other samples, the external quantum efficiency (EQE) profiles in the InGaP top cell were found to be higher for the sample with Te pre-doping. Under a concentrated light condition, higher fill factor (FF) and conversion efficiency were also observed for the sample with Te pre-doping.
These indicate that the crystalline qualities of the upper TJ, composed of a p-GaAs/n-InGaP TJ, and the InGaP top cell were improved by using the Te pre-doping method.
Heavily tellurium (Te)-doped InGaP layers in tunnel junctions (TJs) grown by using metalorganic chemical vapor deposition (MOCVD) were investigated to improve the device performance of InGaP/InGaAs/Ge triple-junction solar cells. Three different doping techniques were employed to grow the Te-doped InGaP layers in the TJ; Te doping, Te and Si co-doping and Te pre-doping.
Compared to other samples, the external quantum efficiency (EQE) profiles in the InGaP top cell were found to be higher for the sample with Te pre-doping. Under a concentrated light condition, higher fill factor (FF) and conversion efficiency were also observed for the sample with Te pre-doping.
These indicate that the crystalline qualities of the upper TJ, composed of a p-GaAs/n-InGaP TJ, and the InGaP top cell were improved by using the Te pre-doping method.
참고문헌 (Reference)
1 R. King, 2009
2 W. Gutter, 53 : 2216-, 2006
3 M. Stan, 312 : 1370-, 2010
4 D. Law, 94 : 1314-, 2010
5 H. Cotal, 2 : 174-, 2009
6 I. Garcia, 298 : 794-, 2007
7 S. Lee, 84 : 2618-, 1998
8 S. Lee, 195 : 13-, 1998
9 S. Jun, 90 : 6048-, 2001
10 C. Ebert, 315 : 61-, 2011
1 R. King, 2009
2 W. Gutter, 53 : 2216-, 2006
3 M. Stan, 312 : 1370-, 2010
4 D. Law, 94 : 1314-, 2010
5 H. Cotal, 2 : 174-, 2009
6 I. Garcia, 298 : 794-, 2007
7 S. Lee, 84 : 2618-, 1998
8 S. Lee, 195 : 13-, 1998
9 S. Jun, 90 : 6048-, 2001
10 C. Ebert, 315 : 61-, 2011
11 J. Samberg, 103 : 103503-, 2013
12 H. Hongbo, 35 : 103003-, 2014
13 H. Kang, 26 : 075009-, 2011
14 X. Li, 405 : 16-, 2014
15 J. Geisz, 91 : 023502-, 2007
16 H. Yu, 51 : 080208-, 2012
17 T. Takamoto, 70 : 381-, 1997
18 T. Takamoto, 85 : 1481-, 1999
19 G. Kinsey, 16 : 503-, 2008
20 T. Tromholt, 96 : 073501-, 2010
21 G. Sun, 18 : 3746-, 2010
22 K. Araki, 66 : 559-, 2001
23 J. Geisz, 93 : 123505-, 2008
24 정상현, "Effect of AlGaAs barrier layer on the characteristics of InGaP/InGaAs/ Ge triple junction solar cells" 한국물리학회 14 (14): 1476-1480, 2014
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분석정보
인용정보 인용지수 설명보기
학술지 이력
| 연월일 | 이력구분 | 이력상세 | 등재구분 |
|---|---|---|---|
| 2023 | 평가예정 | 해외DB학술지평가 신청대상 (해외등재 학술지 평가) | |
| 2020-01-01 | 평가 | 등재학술지 유지 (해외등재 학술지 평가) | |
| 2011-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
| 2009-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
| 2007-01-01 | 평가 | SCI 등재 (등재유지) | |
| 2005-01-01 | 평가 | 등재학술지 유지 (등재유지) | |
| 2002-07-01 | 평가 | 등재학술지 선정 (등재후보2차) | |
| 2000-01-01 | 평가 | 등재후보학술지 선정 (신규평가) |  |
학술지 인용정보
| 기준연도 | WOS-KCI 통합IF(2년) | KCIF(2년) | KCIF(3년) |
|---|---|---|---|
| 2016 | 0.47 | 0.15 | 0.31 |
| KCIF(4년) | KCIF(5년) | 중심성지수(3년) | 즉시성지수 |
| 0.26 | 0.2 | 0.26 | 0.03 |
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