$LaSc_3(BO_3)_4$ 단결정 성장조건 = The effect of Thermal Distribution on $LaSc_3(BO_3)_4$ Crystal Growth by Cz Method

다국어 초록 (Multilingual Abstract)

The rare-earth orthoborate family, RM3(BO3)4 is known to be the most promising material for the microlaser host. To grow LaSc3(BO3)4 single crystal, the phase relation of the system LaBO3-ScBO3 was investigated by DTA method. LaSc(BO3)4 was the unique intermediate compound in the binary system the peritectic reaction point of which was 1495 ±2℃. Owing to the peritectic behavior of the compound, the crystal growth of the rare-earth Sc-borate was carried out by pulling from the melt-soultion of La1+xSc3-x(BO3)4. The optimal conditions for the growth of LaSc3(BO3)4 were determined by traditional CZ method : pulling speed 0.7mm/hr, rotation speed 7-10 rpm under reduction condition. Pt and Ir crucibles could be used for about 8-10 times of growth. The effect of thermal configurations on the temperature distribution was investigated. A special two-coordinate manipulator was made for the precise movement of thermocouples from the melt to the top of the furnace for several thermal configurations. The radial gradient on the melt surface depends strongly on the construction of the afterheater. On the other hand, the axial gradient was mainly propotional to both the opening degree of baffle plate and the mutual positions of crucible and heater.