Highly Manufacturable 65nm McFET (Multi-channel Field Effect Transistor) SRAM Cell with Extremely High Performance

다국어 초록 (Multilingual Abstract)

We demonstrate highly manufacturable Multi-channel Field Effect Transistor (McFET) on bulk Si wafer. McFET shows excellent transistor characteristics, such as 5~6 times higher drive current than planar MOSFET, ideal subthreshold swing, low drain induced barrier lowering (DIBL) without pocket implantation and negligible body bias dependency, maintaining the same source/drain resistance as that of a planar transistor due to the unique feature of McFET. And suitable threshold voltage (VT) for SRAM operation and high static noise margin (SNM) are achieved by using TiN metal gate electrode.

목차 (Table of Contents)

• Abstract
• Ⅰ. INTRODUCTION
• Ⅱ. FABRICATION
• Ⅲ. ELECTRICAL CHARACTERISTICS
• Ⅳ. CONCLUSIONS
• REFERENCES
• 저자소개