높은 항복 전압 특성을 가지는 이중 게이트 AlGaN/GaN 고 전자 이동도 트랜지스터 = A Dual Gate AlGaN/GaN High Electron Mobility Transistor with High Breakdown Voltages

다국어 초록 (Multilingual Abstract)

We have proposed and fabricated a dual gate AlGaN/GaN high electron mobility transistor (HEMT), which exhibits the low leakage current and the high breakdown voltage for the high voltage switching applications. The additional gate between the main gate and the drain is specially designed in order to decrease the electric field concentration at the drain-side of the main gate. The leakage current of the proposed HEMT is decreased considerably and the breakdown voltage increases without sacrificing any other electric characteristics such as the transconductance and the drain current. The experimental results show that the breakdown voltage and the leakage current of proposed HEMT are 362 V and 75 nA while those of the conventional HEMT are 196 V and 428 nA, respectively.

참고문헌 (Reference)

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