Influence of Nitrogen/argon Flow Ratio on the Crystallization of Hafnium Oxynitride Films

다국어 초록 (Multilingual Abstract)

Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide (HfO₂) target with a variety of nitrogen/ argon (N₂/Ar) gas flow ratios. Auger electron spectroscopy (AES) results confirm that N₂ was successfully incorporated into the HfON films. An increase in the N₂/Ar gas flow ratio resulted in metal oxynitride formation. The films prepared with a N₂/Ar flow ratio of 20/20 sccm show (222), (530), and (611) directions of HfO₂N₂, and the (-111), (311) directions of HfO₂. From X-ray reflectometry measurements, it can be concluded that with N₂ incorporated into the HfON films, the film density increases. The density increases from 9.8 to 10.1 g/cm³. XRR also reveals that the surface roughness is related to the N₂/Ar flow ratio.

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