LPMOCVD 법으로 증착된 TiO$_2$ 박막의 특성 = Properties of TiO$_2$ Thin Film Deposited by LPMOCVD

다국어 초록 (Multilingual Abstract)

Effects of LPMOCVD process parameters on the properties of TiO2 thin film were investigated. Depositions were made in the range of temperature 300-67$0^{\circ}C$ with various TTIP(Titanium Tetraisopropoxide) concentrations by contrlling bubbler temperature(40-8$0^{\circ}C$) and/or flow rate(30-90 sccm). Post annealing treatments were carried out at 500-80$0^{\circ}C$ range in the air. Films deposited at 40$0^{\circ}C$ have denser morphology than those of films deposited at 50$0^{\circ}C$ and $600^{\circ}C$ due to slower deposition rate. Bubbler temperature can affect on the deposition rate in mass transfer controlled regime such as 50$0^{\circ}C$ or higher but not below 50$0^{\circ}C$ where surface reaction rate becomes important. On the contrary for films deposited above 50$0^{\circ}C$ flow rate can raise deposition rate but eventually saturate it at the 50 sccm and above due to retarded adhesion of decomposed species. But for films deposited at 40$0^{\circ}C$ deposition rate increases stadily with flow rate. As the film becomes more porous A(200) texture can not be developed and AnataselongrightarrowRutile transition kinetics increases.