<P>Photoinduced charge transfer between semiconductors and gate dielectrics can occur in organic field-effect transistors (OFETs) operating under illumination, leading to a pronounced bias-stress effect in devices that are normally stable while ...
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https://www.riss.kr/link?id=A107506143
2017
-
SCOPUS,SCIE
학술저널
34153-34161(9쪽)
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>Photoinduced charge transfer between semiconductors and gate dielectrics can occur in organic field-effect transistors (OFETs) operating under illumination, leading to a pronounced bias-stress effect in devices that are normally stable while ...
<P>Photoinduced charge transfer between semiconductors and gate dielectrics can occur in organic field-effect transistors (OFETs) operating under illumination, leading to a pronounced bias-stress effect in devices that are normally stable while operating in the dark. Here, we report an observation of a'polarization-dependent photoinduced bias-stress effect in two' prototypical single-crystal OFETs, based on rubrene and tetraphenylbis(indolo{l,2-alpha})quinolin. We find that the decay rate of the source-drain current in these OFETs under, illumination is a periodic function of the polarization angle of incident photoexcitation with respect to the crystal axes, with a periodicity of n. The angular positions of maxima and minima of the bias-stress rate match those of the optical absorption coefficient of the corresponding crystals. The analysis of the effect shows that it stems from a charge transfer of 'hot' holes, photogenerated in the crystal within a very short thermafization length (MLT mu m) from the semiconductor-dielectric interface. The observed phenomenon is a type of intrinsic structure-property relationship, revealing how molecular packing affects parameter drift in organic transistors under illumination. We also demonstrate that a photoinduced charge transfer in OFETs can be used for recording rewritable accumulation channels with an optically defined geometry and resolution, which can be used in a number of potential applications.</P>