BTMSM/O2 유량에 따른 SiOC 박막의 특성 = Properties of SiOC Thin Film by BTMSM/O2 Flow Rates

다국어 초록 (Multilingual Abstract)

The dielectric characteristics of low-k interlayer dielectric materials was analyzed by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm O2 in process chamber. The chemical characteristics of SiOCH were analyzed by measuring FT/IR absorption lines and obtained each dielectric constant by measuring C-V. A correlation of dielectric constant was investigted, closely connected with precursor, it composed of Si-O-Si(C) cage link bond, Si-O-Si(C) cross link bond, and Si-O-Si(C) open link bond at 950～1200cm-1 wavenumber. ILD of BTMSM/O2 could have low dielectric constant about k ~ 2 and react sensitively. Also dielectric constant could be decreased by the effects of decreasing CH3 and growing Si-O-Si(C) after annealing process.