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The decade of the GMDSS in light of IMO Sub-Committee COMSAR debates
Czajkowski, J.; Korcz, K. SIGMA-NOT 2009 p.15-23
Advanced Technologies for Infrared Semiconductor Optoelectronics
Bugajski, M. SIGMA-NOT 2009 p.24-29
Quantum cascade lasers fundamentals
Pabjanczyk, A.; Sarzala, R.; Wasiak, M.; Bugajski, M. SIGMA-NOT 2009 p.30-42
AlGaAs/GaAs quantum cascade lasers for mid-infrared band (∼9 μm)
Kosiel, K.; Szerling, A.; Muszalski, J.; Bugajski, M. SIGMA-NOT 2009 p.43-48
The MOCVD technology of antimonides on GaSb substrates for optoelectronic applications
Wesolowski, M.; Strupinski, W. SIGMA-NOT 2009 p.49-51
Type-II InAs/GaInSb superlattices for infrared photodetectors
Gawron, W.; Rogalski, A. SIGMA-NOT 2009 p.58-60
Optimization of epitaxy of HgCdTe heterostructures for infrared photodetectors
Gawron, W.; Piotrowski, A.; Klos, K.; Orman, Z.; Pawluczyk, J.; Stanaszek, D.; Keblowski, A.; Pedzinska, M.; Piotrowski, J. SIGMA-NOT 2009 p.61-66
Surface smoothness improvement of HgCdTe layers grown by MOCVD
Gawron, W.; Madejczyk, P.; Rogalski, A. SIGMA-NOT 2009 p.67-72