1 "혼합 산화제를 사용한 텅스텐 막의 전기화학적 부식 및 CMP 특성" 18 (18): 303-, 2005.
2 "슬러리와 패드 변화에 따른 텅스텐 플러그 CMP 공정의 최적화" 13 (13): 568-, 2000.
3 "Tungsten CMP in fixed abrasive pad using hydrophilic poly- mer" 21 (21): 22-, 2004.
4 "Non- selective Metal Slurry for CMP and its CMP Method" Ltd.
5 "Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP" -57, p.4601.2003.
6 "Effects of oxidants on the removal of tungsten in CMP process" 257 : 863-, 2004.
7 "Effects of friction energy on polishing results in CMP process J. of KSME" 28 : p.18072004.
8 "Eco-process in semiconductor manufacturing process" 18 (18): 25-, 2000.
9 "Development of an abrasive embedded pad for dishing reduction and uniformity enhance- ment" 37 (37): 948-, 2000.
10 "Chemical-mechanical Planari- zation of Semiconductor Materials" Berlin Heidelberg 85-, 2004.
1 "혼합 산화제를 사용한 텅스텐 막의 전기화학적 부식 및 CMP 특성" 18 (18): 303-, 2005.
2 "슬러리와 패드 변화에 따른 텅스텐 플러그 CMP 공정의 최적화" 13 (13): 568-, 2000.
3 "Tungsten CMP in fixed abrasive pad using hydrophilic poly- mer" 21 (21): 22-, 2004.
4 "Non- selective Metal Slurry for CMP and its CMP Method" Ltd.
5 "Effects of phosphoric acid stabilizer on copper and tantalum nitride CMP" -57, p.4601.2003.
6 "Effects of oxidants on the removal of tungsten in CMP process" 257 : 863-, 2004.
7 "Effects of friction energy on polishing results in CMP process J. of KSME" 28 : p.18072004.
8 "Eco-process in semiconductor manufacturing process" 18 (18): 25-, 2000.
9 "Development of an abrasive embedded pad for dishing reduction and uniformity enhance- ment" 37 (37): 948-, 2000.
10 "Chemical-mechanical Planari- zation of Semiconductor Materials" Berlin Heidelberg 85-, 2004.
11 "Chemical mechanical polishing in silicon processing" Academic Press New York (63) : 186-, 2000.
12 "Chemical Mechanical Planarization of Microelectric Materials" John Wiley & Sons, New York 181-, 1997.
13 "CMP Slurry for Metal Film and its CMP Method" Ltd.
14 "Application of a CMP model to tungsten CMP" 148 (148): 359-, 2001.