SF_6 플라즈마에 의한 에칭 프로세스의 적용 = A Study on the SF_6Plasma Characterstic for the etching process

다국어 초록 (Multilingual Abstract)

In this paper, RFICP equipment is designed and manufactured with the aid of high frequency discharge to produce uniform plasma with high density and large diameter. And SF6 gas is used to investigate plasma characteristics. The electron density and temperature, potential dependence of SF6 plasma in accordance with its operating pressure, gas flux and input power are measured by the method of Langmuir probe. The etching characteristics of the plasma is researched in accordance with operating pressure, gas flux, input power to apply to Silicon Wafer which is used in the field of semiconductor process.
The proposed RFICP equipment, in this paper, has relatively excellent etching characteristics, and is thought to be element of oxidization-sheath etching facility in semiconductor manufacturing process.

목차 (Table of Contents)

• ABSTRACT
• Ⅰ.서론
• Ⅱ.측정값과 그 평가
• Ⅲ.실험장치
• Ⅳ.실험결과 및 고찰
• Ⅴ.결론
• 참고문헌