Single-Electron Pass-Transistor Logic with Multiple Tunnel Junctions and Its Hybrid Circuit with MOSFETs

다국어 초록 (Multilingual Abstract)

To improve the operation error caused by the
thermal fluctuation of electrons, we propose a novel singleelectron
pass-transistor logic circuit employing a multipletunnel
junction (MTJ) scheme and modulate a parameters of
an MTJ single-electron tunneling device (SETD) such as the
number of tunnel junctions, tunnel resistance, and voltage gain.
The operation of a 3-MTJ inverter circuit is simulated at 15 K
with parameters Cg=CT=Cclk=1 aF, RT=5 MΩ, Vclk=40 mV,
and Vin=20 mV. Using the SETD/MOSFET hybrid circuit, the
charge state output of the proposed MTJ-SETD logic is
successfully translated to the voltage state logic.

참고문헌 (Reference)

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