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CMOS Paradigm Change through Material Integration on a Chip
Hirose, M. Japan Society of Applied Physics 2008 p.2-3
One Dimensional Electronics: Physics or Technology?
Lundstrom, M. Japan Society of Applied Physics 2008 p.4-7
Bridging Between Science and Engineering
Sakaki, H. Japan Society of Applied Physics 2008 p.6-679
Control of Interface Properties of High-k/Ge with GeO~2 Interface Layer (Invited)
Kita, K.; Nishimura, T.; Nagashio, K.; Toriumi, A. Japan Society of Applied Physics 2008 p.8-9
Xie, R.; He, W.; Yu, M.; Zhu, C. Japan Society of Applied Physics 2008 p.10-11
Improvement of Interface Properties of GeO~2/Ge MOS Structures Fabricated by Thermal Oxidation
Sasada, T.; Matsubara, H.; Takenaka, M.; Takagi, S. Japan Society of Applied Physics 2008 p.12-13
Amorphous High-k LaLuO~3 Dielectric Film for Ge MIS Gate Stack
Tabata, T.; Kita, K.; Toriumi, A. Japan Society of Applied Physics 2008 p.14-15
Reaction Kinetics Control on Thermal Oxidation Process of Ge in High Pressure Oxygen
Lee, C.H.; Nishimura, T.; Nagashio, K.; Kita, K.; Toriumi, A. Japan Society of Applied Physics 2008 p.16-17
Performance and Reliability of High-k/Metal Gate Stacks: Interfacial Layer Defects (Invited)
Bersuker, G. Japan Society of Applied Physics 2008 p.18-19
Sato, M.; Aoyama, T.; Nara, Y.; Ohji, Y. Japan Society of Applied Physics 2008 p.20-21