We have considered the influence of electron irradiation energy of 300, 600 and 900 eV on the stuctural,electrical and optical properties of GZO/TiO2 thin films prepared with RF magentron sputtering. The optical transmittance and electrical resistivit...
We have considered the influence of electron irradiation energy of 300, 600 and 900 eV on the stuctural,electrical and optical properties of GZO/TiO2 thin films prepared with RF magentron sputtering. The optical transmittance and electrical resistivity of the films were dependent on the electron`s irradiation energy. The electron irradiated GZO/TiO2 films at 900 eV are grown as a hexagonal wurtzite phase and the resistivity is decreased with electron irradiation energy. The GZO/TiO2 films irradiated at 900 eV shows the lowest resistivity of 4.3 × 10-3Ωcm. The optical transmittance in a visible wave length region also increased with the electron irradiation energy. The film that electron irradiated at 900 eV shows 82% of optical transmittance and higher work function of 5.18eV in this study.