IMT-2000 수신기용 저잡음 증폭의 구현에 관한 연구 = A Study on the Fabrication of the Low Noise Amplifier for IMT-2000 Receiver

다국어 초록 (Multilingual Abstract)

This paper presents the fabrication of the LNA which is operating at 2.13 ∼2.16 GHz for IMT-2000 front-end receiver using series feedback and resistive decoupling circuit. Series feedback added to the source lead of a transistor keeps the low noise characteristics and drops the input reflection coefficient of amplifier simultaneously. Also, it increases the stability of the LNA. Resistive decoupling circuit is suitable for input stage matching because a signal at low frequency is dissipated by a resistor in the matching network. The amplifier consists of GaAs FET ATF-10136 for low noise stage and VNA-25 which is internally matched MMIC for high gain stage. The amplifier is fabricated with both the RF circuits and self bias circuit on the Teflon substrate with 3.5 permittivity. The measured results of the LNA which is fabricated using the above design technique are presented more than 30 dB in gain, P1dB 17 dB and less than 0.7 dB in noise figure, 1.5 in input ㆍ output SWR(Standing Wave Ratio).

목차 (Table of Contents)

• 1.서론
• 2.회로 설계 이론
• 2.1설계 목표치 설정
• 2.2저항결합 회로(Resistive decoupling circuit)
• 2.3자체 바이어스 회로(Self-bias circuit)
• 3.설계 및 제작
• 4.측정결과
• 5.결론
• 참고문헌