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      Electrical and Optical Properties in Transparent Conducting Oxides: Effect of Ultra Violet Irradiation

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      https://www.riss.kr/link?id=A104659289

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      다국어 초록 (Multilingual Abstract) kakao i 다국어 번역

      A design of experiments was applied in order to investigate the effect of processing variables in UV irradiation on the electrical/optical properties in indium-zinc oxide thin films, The processing variables, equivalently input variables are listed as UV irradiation time, oxygen flow rate, and chamber pressure. The statistical significance of Ultra Violet (UV) treatment was confirmed using a paired-t test. The full factorial 23 design was employed to determine significant main and interaction effects in UV irradiation process. The chamber pressure and the interaction between UV irradiation time and O2 flow rate were found to be statistically significant at the significance level of 0.1. Furthermore, the optimized approach was proposed in achieving the improved conductivity after UV irradiation.Key words Indium-zinc oxides, UV irradiation, Electrical/Optical Properties, Design of experiments
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      A design of experiments was applied in order to investigate the effect of processing variables in UV irradiation on the electrical/optical properties in indium-zinc oxide thin films, The processing variables, equivalently input variables are listed as...

      A design of experiments was applied in order to investigate the effect of processing variables in UV irradiation on the electrical/optical properties in indium-zinc oxide thin films, The processing variables, equivalently input variables are listed as UV irradiation time, oxygen flow rate, and chamber pressure. The statistical significance of Ultra Violet (UV) treatment was confirmed using a paired-t test. The full factorial 23 design was employed to determine significant main and interaction effects in UV irradiation process. The chamber pressure and the interaction between UV irradiation time and O2 flow rate were found to be statistically significant at the significance level of 0.1. Furthermore, the optimized approach was proposed in achieving the improved conductivity after UV irradiation.Key words Indium-zinc oxides, UV irradiation, Electrical/Optical Properties, Design of experiments

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      참고문헌 (Reference)

      1 "in Semiconducting Transparent Thin Films" 1995

      2 "The Effects of Oxygen Content on Electrical and Optical Properties of Indium Tin Oxide Films Fabricated by Reactive Sputtering" Thin Solid Films 208-281, 1996

      3 "Study on Crystallinity of Tin-Doped Indium Oxide Films Deposited by DC Magnetron Sputtering" 37 (37): 1870-1876, 1998

      4 "Structural and Electrical Properties of Sputtered Indium-Zinc Oxide Thin Films" Thin Solid Films 515 (515): 1364-1369, 2006

      5 "Room Temperature Deposition of ITO Using r.f. Magnetron Sputtering" Thin Solid Films 413 : 181-185, 2002

      6 "Performances Exhibited by Large Area ITO Layers Produced by r.f. Magnetron Sputtering" Thin Solid Films 337 : 171-175, 1999

      7 "Origin of Characteristic Grain-Subgrain Structure of Tin-Doped Indium Oxide Films" Thin Solid Films 259 : 38-45, 1995

      8 "Indium Tin Oxide Films Prepared by Radio Frequency Magnetron Sputtering Method at a Low Processing Temperature" Thin Solid Films 376 : 255-263, 2000

      9 "Improved ITO Thin Films with a Thin ZnO Buffer Layer by Sputtering" Thin Solid Films 360 : 75-81, 2000

      10 "Fabrication and Characterization of ITO Thin Films Deposited by Excimer Laser Evaporation" Thin Solid Films 288 : 248-253, 1996

      1 "in Semiconducting Transparent Thin Films" 1995

      2 "The Effects of Oxygen Content on Electrical and Optical Properties of Indium Tin Oxide Films Fabricated by Reactive Sputtering" Thin Solid Films 208-281, 1996

      3 "Study on Crystallinity of Tin-Doped Indium Oxide Films Deposited by DC Magnetron Sputtering" 37 (37): 1870-1876, 1998

      4 "Structural and Electrical Properties of Sputtered Indium-Zinc Oxide Thin Films" Thin Solid Films 515 (515): 1364-1369, 2006

      5 "Room Temperature Deposition of ITO Using r.f. Magnetron Sputtering" Thin Solid Films 413 : 181-185, 2002

      6 "Performances Exhibited by Large Area ITO Layers Produced by r.f. Magnetron Sputtering" Thin Solid Films 337 : 171-175, 1999

      7 "Origin of Characteristic Grain-Subgrain Structure of Tin-Doped Indium Oxide Films" Thin Solid Films 259 : 38-45, 1995

      8 "Indium Tin Oxide Films Prepared by Radio Frequency Magnetron Sputtering Method at a Low Processing Temperature" Thin Solid Films 376 : 255-263, 2000

      9 "Improved ITO Thin Films with a Thin ZnO Buffer Layer by Sputtering" Thin Solid Films 360 : 75-81, 2000

      10 "Fabrication and Characterization of ITO Thin Films Deposited by Excimer Laser Evaporation" Thin Solid Films 288 : 248-253, 1996

      11 "Electron Transport and Optical Characteristics in Amorphous Indium Zinc Oxide Films" 352 (352): 1471-1474, 2006

      12 "Electrical/Oprical Properties of Thin Transparent Oxide Films Deposited Using DC Magnetron Sputtering" 449-992, 2004

      13 "Electrical and Optical Properties of Amorphous Indium Zinc Oxide Films" Thin Solid Films 496 (496): 99-103, 2006

      14 "Deposition of Transparent and Conducting Indium-Tin-Oxide Films by the r.f.-Superimposed DC Sputtering Technology" Thin Solid Films 354 : 100-105, 1999

      15 "Deposition of IndiumTin-Oxide Films on Polymer Substrates for Application in Plastic-Based Flat Panel Displays" Thin Solid Films 397 : 4955-, 2001

      16 "Criteria for Choosing Transparent Conductors" 25 (25): 52-57, 2000

      17 "A Study of Amorphous and Crystalline Phases in In2O3-10 wt % ZnO Thin Films Deposited by DC Magnetron Sputtering" Thin Solid Films 496 (496): 89-94, 2006

      18 "A Modified Transparent Conducing Oxide for Flat Panel Displays Only" 40 (40): 1282-1286, 2001

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      공동연구자 (7)

      유사연구자 (20) 활용도상위20명

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      2027 평가예정 재인증평가 신청대상 (재인증)
      2021-01-01 평가 등재학술지 유지 (재인증) KCI등재
      2019-01-01 평가 등재학술지 유지 (계속평가) KCI등재
      2016-01-01 평가 등재학술지 유지 (계속평가) KCI등재
      2012-01-01 평가 등재학술지 유지 (등재유지) KCI등재
      2010-03-25 학회명변경 한글명 : 한국반도체및디스플레이장비학회 -> 한국반도체디스플레이기술학회
      영문명 : The Korean Society of Semiconductor & Display Equipment Technology -> The Korean Society of Semiconductor & Display Technology
      KCI등재
      2010-03-25 학술지명변경 한글명 : 반도체및디스플레이장비학회지 -> 반도체디스플레이기술학회지
      외국어명 : Journal of the Semiconductor and Display Equipment Technology -> Journal of the Semiconductor & Display Technology
      KCI등재
      2009-01-01 평가 등재학술지 선정 (등재후보2차) KCI등재
      2008-01-01 평가 등재후보 1차 PASS (등재후보1차) KCI등재후보
      2006-01-01 평가 등재후보학술지 선정 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 0.29 0.29 0.26
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.21 0.18 0.217 0.02
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