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      KCI등재 SCIE SCOPUS

      Simulation of the Grain Size Effect in Gas-Sensitive SnO2 Thin Films Using the Oxygen Vacancy Gradient Distribution Model

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      https://www.riss.kr/link?id=A105871422

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      다국어 초록 (Multilingual Abstract)

      The model of gradient-distributed oxygen vacancies is utilized in simulatingthe grain size effects of gas-sensitive SnO2 thin films. The distribution profileof oxygen vacancies has a grain size effect and the profile gradient correlatespositively with the radius of the grains. The simulation results show that thegrain size is a fundamental factor dominating the gas-sensing properties ofthin films. The potential barrier height and resistivity have significant grainsize effects when m is between 0.1 and 0.5 nm−1. The size effects on sensorresponse to stimulant gases can be enhanced by increasing the value of m orthe absolute value of α. Two expressions are used to simulate the grain sizeeffect of the sensor response. The expressions act similarly when α < 0.2.
      The simplified response provides a neat function to quantitatively explain thesensor performance on gases with low partial pressure. Although the accurate response is complicated, it is applicable to theentire concentration range. A small power-law exponent n is calculated from the accurate response expression when a high gasconcentration is employed, illustrating a “saturation effect” of the response.
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      The model of gradient-distributed oxygen vacancies is utilized in simulatingthe grain size effects of gas-sensitive SnO2 thin films. The distribution profileof oxygen vacancies has a grain size effect and the profile gradient correlatespositively with...

      The model of gradient-distributed oxygen vacancies is utilized in simulatingthe grain size effects of gas-sensitive SnO2 thin films. The distribution profileof oxygen vacancies has a grain size effect and the profile gradient correlatespositively with the radius of the grains. The simulation results show that thegrain size is a fundamental factor dominating the gas-sensing properties ofthin films. The potential barrier height and resistivity have significant grainsize effects when m is between 0.1 and 0.5 nm−1. The size effects on sensorresponse to stimulant gases can be enhanced by increasing the value of m orthe absolute value of α. Two expressions are used to simulate the grain sizeeffect of the sensor response. The expressions act similarly when α < 0.2.
      The simplified response provides a neat function to quantitatively explain thesensor performance on gases with low partial pressure. Although the accurate response is complicated, it is applicable to theentire concentration range. A small power-law exponent n is calculated from the accurate response expression when a high gasconcentration is employed, illustrating a “saturation effect” of the response.

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      참고문헌 (Reference)

      1 J. Liu, 145 : 657-, 2010

      2 C. Xu, 3 : 147-, 1991

      3 C. Malagù, 91 : 808-, 2002

      4 C. Fonstad, 42 : 2911-, 1971

      5 S. Samson, 44 : 4618-, 1973

      6 H. Liu, 140 : 190-, 2009

      7 J. Liu, 150 : 330-, 2010

      8 N. Yamazoe, 515 : 8302-, 2007

      9 S. Gong, 164 : 85-, 2009

      10 J. Liu, 138 : 289-, 2009

      1 J. Liu, 145 : 657-, 2010

      2 C. Xu, 3 : 147-, 1991

      3 C. Malagù, 91 : 808-, 2002

      4 C. Fonstad, 42 : 2911-, 1971

      5 S. Samson, 44 : 4618-, 1973

      6 H. Liu, 140 : 190-, 2009

      7 J. Liu, 150 : 330-, 2010

      8 N. Yamazoe, 515 : 8302-, 2007

      9 S. Gong, 164 : 85-, 2009

      10 J. Liu, 138 : 289-, 2009

      11 N. Matsunaga, 83 : 216-, 2002

      12 T. Seiyama, 34 : 1502-, 1962

      13 T. Seiyama, 38 : 1069-, 1966

      14 G. Korotcenkov, 436 : 119-, 2003

      15 J. D. Prades, 140 : 337-, 2009

      16 V. Kumar, 138 : 587-, 2009

      17 G. X. Wang, 131 : 313-, 2008

      18 H. -S. Hong, 1 : 11-, 2005

      19 S. R. Morrison, 12 : 425-, 1987

      20 N. Yamazoe, 86 : 335-, 1979

      21 N. Yamazoe, 128 : 566-, 2008

      22 S. R. Morrison, 11 : 283-, 1987

      23 N. Yamazoe, 138 : 100-, 2009

      24 G. Sakai, 80 : 125-, 2001

      25 S. M. Sze, "Sze, Semiconductor Devices: Physics and Technology" John Willey & Sons, Inc 2009

      26 Kamalpreet Khun Khun, "Surfactant Assisted Growth of Nanostructured Tin oxide films for gas sensing applications" 대한금속·재료학회 7 (7): 303-308, 2011

      27 G.D. Khuspe, "SnO2nanoparticles-modified Polyaniline Films as Highly Selective, Sensitive, Reproducible and Stable Ammonia Sensors" 대한금속·재료학회 10 (10): 191-197, 2014

      28 문희규, "Mechanism of the Sensitivity Enhancement in TiO₂ Hollow-Hemisphere Gas Sensors" 대한금속·재료학회 6 (6): 135-139, 2010

      29 김범준, "In2O3-Based Micro Gas Sensor for Detecting NOx Gases" 대한금속·재료학회 10 (10): 509-513, 2014

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      공동연구자 (7)

      유사연구자 (20) 활용도상위20명

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      학술지 이력

      학술지 이력
      연월일 이력구분 이력상세 등재구분
      학술지등록 한글명 : Electronic Materials Letters
      외국어명 : Electronic Materials Letters
      2023 평가예정 해외DB학술지평가 신청대상 (해외등재 학술지 평가)
      2020-01-01 평가 등재학술지 유지 (해외등재 학술지 평가) KCI등재
      2013-10-01 평가 등재학술지 선정 (기타) KCI등재
      2011-01-01 평가 등재후보학술지 유지 (기타) KCI등재후보
      2009-12-29 학회명변경 한글명 : 대한금속ㆍ재료학회 -> 대한금속·재료학회 KCI등재후보
      2008-01-01 평가 SCIE 등재 (신규평가) KCI등재후보
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      학술지 인용정보

      학술지 인용정보
      기준연도 WOS-KCI 통합IF(2년) KCIF(2년) KCIF(3년)
      2016 1.68 0.41 1.08
      KCIF(4년) KCIF(5년) 중심성지수(3년) 즉시성지수
      0.89 0.83 0.333 0.06
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