Electrical and Optical Properties of Ga-Doped ZnO Films Grown on Glass and Plastic Substrates by Using Plasma-Assisted Deposition

다국어 초록 (Multilingual Abstract)

Ga-doped zinc-oxide (GZO) films grown under various Ga/Zn supply ratios were carefully characterized by using Hall measurements and optical transmittance measurements to investigate the electrical and the optical properties of the GZO films on glass, polyethylene terephthalate (PET), and polycarbonate (PC) substrates. The resistivity of the GZO films grown at 290 ℃ on glass substrates ranged from 4 × 10-2 cm to 3 × 10-4 cm for Ga/Zn supply ratios from 0 % to 0.5 %. The growth of the GZO films at a low temperature of 90 ℃ was also performed on glass, PET, and PC substrates. When the Ga/Zn supply ratios were 0.05 - 0.1 %, the 90 ℃-grown GZO films on glass substrates showed resistivities similar to those of 290 ℃-grown GZO films. The 90 ℃-grown GZO films on PET and PC substrates showed resistivities of 1 × 10-3 cm and 4 × 10-4 cm, respectively. The Hall carrier density was 8 × 1020 cm-3, which was almost the same value as that of the 90 ℃-grown GZO films on glass substrates. The GZO films on PET and PC substrates also showed visible transparency as good as that of the GZO films on glass substrates, and the average transmittance in the visible region was higher than 85 %.

참고문헌 (Reference)

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