Dual-Mode High-Dynamic Range Class E HBT Power Amplifier for WCDMA EER Transmitter|RISS 상세보기

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Dual-Mode High-Dynamic Range Class E HBT Power Amplifier for WCDMA EER Transmitter

한글로보기

https://www.riss.kr/link?id=A107584580

저자

Ki Young Kim ; Woo Young Kim ; Chul Soon Park
발행기관
IEEE
학술지명
IEEE microwave and wireless components letters(a publication of the IEEE Microwave Theory and Techniques Society)
권호사항

Vol.20 No.10 [2010]
발행연도
2010
작성언어
-
등재정보
SCOPUS
자료형태
학술저널
수록면

572-574(3쪽)
제공처
ScienceON

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다국어 초록 (Multilingual Abstract)

This letter demonstrates a high-dynamic range GaAs heterojunction bipolar transistor Class E power amplifier (PA) for a WCDMA envelope elimination and restoration transmitter using a dual-mode amplification. An impedance optimization can operate the lossless high-power Class E mode and lossless low-power Class AB mode. This PA has a high dynamic range of -50 dBm to 27 dBm and obtains a remarkably improved efficiency of 9% and 27% power-added efficiency (PAE) at output powers of 0 dBm and 10 dBm, respectively, for low-power mode, and 40% and 48% PAE at 20 and 27 dBm, respectively, for high-power mode.

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This letter demonstrates a high-dynamic range GaAs heterojunction bipolar transistor Class E power amplifier (PA) for a WCDMA envelope elimination and restoration transmitter using a dual-mode amplification. An impedance optimization can oper...

This letter demonstrates a high-dynamic range GaAs heterojunction bipolar transistor Class E power amplifier (PA) for a WCDMA envelope elimination and restoration transmitter using a dual-mode amplification. An impedance optimization can operate the lossless high-power Class E mode and lossless low-power Class AB mode. This PA has a high dynamic range of -50 dBm to 27 dBm and obtains a remarkably improved efficiency of 9% and 27% power-added efficiency (PAE) at output powers of 0 dBm and 10 dBm, respectively, for low-power mode, and 40% and 48% PAE at 20 and 27 dBm, respectively, for high-power mode.