<P>P-type diamond devices have high potential for power semiconductors due to their high critical field, hole mobility, and thermal conductivity. The electrical characteristics of p-type pseudovertical diamond Schottky barrier diodes (SBDs) were...
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https://www.riss.kr/link?id=A107435577
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2017
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SCI,SCIE,SCOPUS
학술저널
06GE09
0
상세조회0
다운로드다국어 초록 (Multilingual Abstract)
<P>P-type diamond devices have high potential for power semiconductors due to their high critical field, hole mobility, and thermal conductivity. The electrical characteristics of p-type pseudovertical diamond Schottky barrier diodes (SBDs) were...
<P>P-type diamond devices have high potential for power semiconductors due to their high critical field, hole mobility, and thermal conductivity. The electrical characteristics of p-type pseudovertical diamond Schottky barrier diodes (SBDs) were investigated by numerical simulation. The impact ionization coefficients were required to obtain the breakdown voltage. They were revised to satisfy a parallel-plane breakdown field of 10MV/cm. The doping concentration and thickness of a low-doped drift layer were key parameters in determining the parallel-plane breakdown voltage. The p-type pseudovertical diamond SBDs exhibited lower breakdown voltage than the parallel-plane breakdown voltage because field crowding occurred at the edge of the cathode. When the doping concentration and thickness of the p- drift layer were 10(16)cm(-3) and 4 mu m, respectively, the breakdown voltage of the p-type pseudovertical diamond SBD was 961V, which was considerably less than the parallel-plane breakdown voltage of 3646V. (C) 2017 The Japan Society of Applied Physics</P>
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