표면 Micromachining법을 이용한 MIMIC용 ZnO-FBAR(Thin-Film Bulk Acoustic Wave Resonator)의 제조 및 그 특성 = The Fabrication and Characteristics of ZnO-FBAR for MIMIC Using Surface Micromachining Techniqe

다국어 초록 (Multilingual Abstract)

FBAR(Thin-Film Bulk Acoustic wave Resonator) is monolithically integrable with semiconductor device, leading to small size and low cost, high Q rf circuit elements with applications in the radar and communications area. FBAR with Air-gap used in high frequency range(GHz range) was fabricated by surface micromachining technique. Zinc Oxide(ZnO) thin film was used as piezoelectric material and was deposited by rf magnetron sputtering. The thickness of ZnO thin film was about 1 μm. Thin metal film(Ni-Cr:50 Å/Au:1000 Å) was used as top and bottom electrodes to reduce acoustic wave loss. The measured resonant frequency of the FBAR was 2.95 GHz and S_(11) value(forward reflection value) was -18.912 dB.