AlGaN 薄膜의 異狀 相轉移 現像硏究 = Anomalous Phase Transition with relation to Photoluminescence the Al Ga N Thin Film

다국어 초록 (Multilingual Abstract)

Exciton formation energy of AlGaN thin film is roughly scaled as , ; exciton formation energy) from the energy gap values depending on composition and temperature. Phase diagram of vs. rectangular coordinates is presented, and phase transition behavior of the critical region is explained by the theories of universal bimetalic binding energy and alloy potential fluctuation. We assert the local pseudopotential shape of critical point be the key to the calculation of parameters such as energy gap, cohesive energy and elastic bulk modulus in the sense that we get the density functional and correction factors to meet the selfconsistency.